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PDF MDF10N65B Fiche technique - MagnaChip

Numéro de référence MDF10N65B
Description N-Channel MOSFET
Fabricant MagnaChip 
Logo MagnaChip Logo 

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MDF10N65B Datasheet, Description
MDF10N65B
N-Channel MOSFET 650V, 10.0A, 1.0
General Description
The MDF10N65B MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
MDF10N65B is suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 650V
ID = 10.0A
RDS(ON) 1.0Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Rating
650
±30
10.0*
5.0*
40*
47.7
0.38
15
4.5
212
-55~150
Symbol
RθJA
RθJC
Rating
62.5
2.62
Unit
V
V
A
A
A
W
W/oC
mJ
V/ns
mJ
oC
Unit
oC/W
Jun. 2010 Version 1.2
1 MagnaChip Semiconductor Ltd.
MDF10N65B Fiche technique
18
16
Vgs=5.0V
=5.5V
=6.0V
14 =6.5V
=7.0V
12 =8.0V
=10.0V
10 =15.0V
8
6
4
Notes
2 1. 250Pulse Test
2. TC=25
0
0 5 10 15
V ,Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
3.0
Notes :
2.5 1. VGS = 10 V
2. I = 4A
D
2.0
1.5
1.0
0.5
0.0
-50
-25
0 25 50 75 100
TJ, Junction Temperature [oC]
125
Fig.3 On-Resistance Variation with
Temperature
150
1.0 VGS=10.0V
VGS=20V
0.8
2 4 6 8 10 12 14 16
I ,Drain Current [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
18
1.20
1.15
1.10
Notes :
1. V = 0 V
GS
2. I = 250
D
1.05
1.00
0.95
0.90
0.85
0.80
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
15025
-55
1
246
VGS [V]
Fig.5 Transfer Characteristics
8
Notes :
1. V = 0 V
GS
2.250s Pulse test
10
150
25
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jun. 2010 Version 1.2
3 MagnaChip Semiconductor Ltd.

3 Page

MDF10N65B pdf
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Jun. 2010 Version 1.2
6 MagnaChip Semiconductor Ltd.

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