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PDF LMUN5212DW1T1G Fiche technique - Leshan Radio Company

Numéro de référence LMUN5212DW1T1G
Description Dual Bias ResistorTransistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company Logo 



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LMUN5212DW1T1G Datasheet, Description
LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• We declare that the material of product compliance with RoHS requirements.
LMUN5211DW1T1G
Series
6
5
4
1
2
3
SC-88/SOT-363
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO 50 Vdc
Collector-Emitter Voltage
V CEO 50 Vdc
Collector Current
I C 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
R θJA
670 (Note 1.) °C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
PD
R θJA
R θJL
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
mW/°C
°C/W
°C/W
°C
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
Rev.O 1/10
LMUN5212DW1T1G Fiche technique
LESHAN RADIO COMPANY, LTD.
LMUN5211DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5211DW1T1, G
MUN5212DW1T1, G
MUN5213DW1T1, G
MUN5214DW1T1, G
MUN5215DW1T1, G
MUN5216DW1T1, G
MUN5230DW1T1, G
MUN5231DW1T1, G
MUN5232DW1T1, G
MUN5233DW1T1, G
MUN5234DW1T1, G
MUN5235DW1T1, G
MUN5236DW1T1, G
MUN5237DW1T1, G
ICBO
ICEO
IEBO
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5211DW1T1, G
MUN5212DW1T1, G
MUN5213DW1T1, G
MUN5214DW1T1, G
MUN5215DW1T1, G
MUN5216DW1T1, G
MUN5230DW1T1, G
MUN5231DW1T1, G
MUN5232DW1T1, G
MUN5233DW1T1, G
MUN5234DW1T1, G
MUN5235DW1T1, G
MUN5236DW1T1, G
MUN5237DW1T1, G
V(BR)CBO
V(BR)CEO
50
50
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
Typ
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
Max Unit
100 nAdc
500 nAdc
0.5 mAdc
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
− Vdc
− Vdc
Rev.O 3/10

3 Page

LMUN5212DW1T1G pdf
LESHAN RADIO COMPANY, LTD.
LMUN5211DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5211DW1T1
1 1000
0.1
0.01
100
0.001
0
4
20 40
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
10
50 1
100
10
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
10
3
1
2
0.1
1
0.01
0
0 10 20 30 40
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
10
50
0.001
0
12
34
56
78
9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
1
0.1
0
10 20 30 40 50
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
Rev.O 6/10

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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