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PDF BFL4037 Fiche technique - Sanyo

Numéro de référence BFL4037
Description N-Channel Silicon MOSFET
Fabricant Sanyo 
Logo Sanyo Logo 



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BFL4037 Datasheet, Description
Ordering number : ENA1831
BFL4037
SANYO Semiconductors
DATA SHEET
BFL4037
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)=0.33Ω (typ.)
Input capacitance Ciss=1200pF (typ.)
10V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW10μs, duty cycle1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
500 V
±30 V
16 A
11 A
60 A
2.0 W
40 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
EAS
IAV
159 mJ
16 A
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=1mH, IAV=16A (Fig.1)
*5 L1mH, single pulse
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
0.9
1.2
0.75
123
2.55 2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
FL4037
LOT No.
1
3
http://semicon.sanyo.com/en/network
90810QB TK IM TC-00002471 No. A1831-1/5
BFL4037 Fiche technique
BFL4037
45
Tc=25°C
40
35
30
ID -- VDS
15V
10V
8V
25
20
15
10 6V
5 VGS=5V
0
0 5 10 15 20 25 30
1.2 Drain-Rto-DSoSu(rocenV) ol-t-ageV, GVDSS -- V IT11732
ID=8A
1.0
0.8
0.6
Tc=75°C
0.4
25°C
0.2 --25°C
0
3 5 7 9 11 13 15
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT11734
3
2 VDS=10V
10
7
25°C
5
3
Tc=
--25°C
75°C
2
1.0
7
5
3
0.1
1000
7
5
3
2
23
5 7 1.0
2 3 5 7 10
Drain Current,
SW Time
I-D-
-- A
ID
23 5
IT11736
VDD=200V
VGS=10V
td(off)
100
7
tf
tr
5
3 td(on)
2
10
0.1
2 3 5 7 1.0 2 3 5 7 10
Drain Current, ID -- A
2 3 57
IT11738
45
VDS=20V
40
35
ID -- VGS
Tc= --25°C
25°C
30 75°C
25
20
15
10
5
0
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
--50
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0
2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage,
RDS(on) --
VTcGS
--
V
IT11733
I D=8A, V GS=10V
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT11735
VGS=0V
0.4 0.6 0.8 1.0 1.2 1.4
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT11737
f=1MHz
Ciss
Coss
Crss
5 10 15 20 25 30 35 40 45 50
Drain-to-Source Voltage, VDS -- V IT11739
No. A1831-3/5

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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