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PDF BFL4004 Fiche technique - Sanyo

Numéro de référence BFL4004
Description N-Channel Silicon MOSFET
Fabricant Sanyo 
Logo Sanyo Logo 

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BFL4004 Datasheet, Description
Ordering number : ENA1796
BFL4004
SANYO Semiconductors
DATA SHEET
BFL4004
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)=1.9Ω (typ.)
Input capacitance Ciss=710pF (typ.)
10V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW10μs, duty cycle1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
800 V
±30 V
6.5 A
4.3 A
13 A
2.0 W
36 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
EAS
IAV
241 mJ
6.5 A
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=10mH, IAV=6.5A (Fig.1)
*5 L10mH, single pulse
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
0.9
1.2
0.75
123
2.55 2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
FL4004
LOT No.
1
3
http://semicon.sanyo.com/en/network
70710QB TK IM TC-00002398 No. A1796-1/5
BFL4004 Fiche technique
12
Tc=25°C
10
8
6
4
ID -- VDS
BFL4004
12
15V
10V 10
7V 8
6
6V
4
ID -- VGS
VDS=20V
Tc= --25°C
25°C
75°C
2 5V
0 VGS=4V
0 5 10 15 20 25 30 35 40 45 50
6
Drain-to-Source
RDS(on)
Vo--ltagVeG, VSDS
--
V
IT15749
ID=3.25A
Single pulse
5
4
3 Tc=75°C
2 25°C
--25°C
1
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
7
5 VDS=20V
IT15751
3 25°C
2
1.0
7
Tc= --25°C 75°C
5
3
2
0.1
7
5
0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
7
Drain Current,
SW Time
I-D-
-- A
ID
IT15753
5
VDD=200V
VGS=10V
3
2 td(off)
100
7
5 tf
3 tr
2 td(on)
10
7
0.1
23
5 7 1.0
23
5 7 10
2
Drain Current, ID -- A
IT15755
2
0
0 2 4 6 8 10 12
7
Gate-to-Source Voltage,
RDS(on) --
VTcGS
--
V
IT15750
Single pulse
6
5
4
3
V GS=10V, I D=3.25A
2
1
0
--50 --25
0
25 50 75 100
Case Temperature, Tc -- °C
3
2 VGS=0V
IS -- VSD
Single pulse
10
7
5
3
2
125 150
IT15752
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
5
3
2
0.4 0.6 0.8 1.0 1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-D
-- V
VDS
IT15754
f=1MHz
1000
7
5
3
2
100
7
5
3
2
10
0
Ciss
Coss
Crss
5 10 15 20 25 30 35 40 45 50
Drain-to-Source Voltage, VDS -- V IT15756
No. A1796-3/5

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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