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PDF BFL4001 Fiche technique - Sanyo

Numéro de référence BFL4001
Description N-Channel Silicon MOSFET
Fabricant Sanyo 
Logo Sanyo Logo 



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BFL4001 Datasheet, Description
Ordering number : ENA1638A
BFL4001
SANYO Semiconductors
DATA SHEET
BFL4001
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance
Avalanche resistance guarantee
High-speed switching
10V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900 V
Gate-to-Source Voltage
VGSS
±30 V
Drain Current (DC)
IDc*1
IDpack*2
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
6.5 A
4.1 A
Drain Current (Pulse)
IDP PW10μs, duty cycle1%
13 A
Allowable Power Dissipation
PD Tc=25°C (SANYO’s ideal heat dissipation condition)*3
2.0 W
37 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
223 mJ
Avalanche Current *5
IAV
6.5 A
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6.5A
*5 L10mH, single pulse
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54 2.54
FL4001
LOT No.
1
2.76
0.5 1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
3
http://semicon.sanyo.com/en/network
22912 TKIM TC-00002729/31010QB TK IM TC-00002256 No.A1638-1/5
BFL4001 Fiche technique
BFL4001
6 RDS(on) -- VGS
ID=3.25A
5
4
Tc=75°C
3
25°C
2
--25°C
1
0
4 5 6 7 8 9 10 11 12 13
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
7
5 VDS=20V
14 15
IT15296
3
2
25°C
1.0
7
Tc= --25°C 75°C
5
3
2
0.1
7
5
0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
7
5
VDD=200V
VGS=10V
Drain Current,
SW Time
I-D-
-- A
ID
IT15298
3
2 td(off)
100
7
5 tf
3 tr
2 td(on)
10
7
0.1
23
10
VDS=200V
9 ID=6.5A
8
5 7 1.0
2 3 5 7 10
Drain Current,
VGS --
IQDg--
A
23
IT15300
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Total Gate Charge, Qg -- nC
IT15302
7 RDS(on) -- Tc
6
5
4
3
2
V GS=10V, I D=3.25A
1
0
--50
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
5
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT15297
VGS=0V
0.4 0.6 0.8 1.0 1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-D
-- V
VDS
IT15299
f=1MHz
1000
7
5
3
2
100
7
5
3
2
Ciss
Coss
Crss
10
0 5 10 15 20 25 30 35 40 45 50
Drain-to-Source
A
Voltage,
SO
VDS
--
V
IT15301
100
7
5
3
2 IDP=13A (PW10μs)
10
7
IDc(*1)=6.5A
5
3
2
IDpack(*2)=4.1A
1.0
7
5
3
2
Operation in
DC op1e0r0a1tmi0omsn1sms 100μ10sμs
0.1
7
5
this area is
limited by RDS(on).
3
2
Tc=25°C
0.01 Single pulse
*1. Shows chip capability
*2. SANYO's ideal heat dissipation condition
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 5 71000
Drain-to-Source Voltage, VDS -- V IT16791
No.A1638-3/5

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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