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PDF BFL4036 Fiche technique - Sanyo

Numéro de référence BFL4036
Description N-Channel Silicon MOSFET
Fabricant Sanyo 
Logo Sanyo Logo 

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BFL4036 Datasheet, Description
Ordering number : ENA1830
BFL4036
SANYO Semiconductors
DATA SHEET
BFL4036
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)=0.4Ω (typ.)
Input capacitance Ciss=1000pF (typ.)
10V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW10μs, duty cycle1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
500 V
±30 V
14 A
9.6 A
50 A
2.0 W
37 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
EAS
IAV
122 mJ
14 A
Note :*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=1mH, IAV=14A (Fig.1)
*5 L1mH, single pulse
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
0.9
1.2
0.75
123
2.55 2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
FL4036
LOT No.
1
3
http://semicon.sanyo.com/en/network
90810QB TK IM TC-00002470 No. A1830-1/5
BFL4036 Fiche technique
BFL4036
40
Tc=25°C
35
30
25
ID -- VDS
15V
10V
8V
20
15
10
6V
5
VGS=5V
0
0 5 10 15 20 25 30
Drain-Rto-DSoSu(rocenV) ol-t-ageV, GVDSS -- V IT11720
1.4
ID=7A
1.2
1.0
0.8
0.6 Tc=75°C
0.4 25°C
--25°C
0.2
40
VDS=20V
35
30
ID -- VGS
Tc= --25°C
25°C
25 75°C
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
1.2
Gate-to-Source Voltage,
RDS(on) --
VTcGS
--
V
IT11721
1.0
0.8
0.6 I D=7A, V GS=10V
0.4
0.2
0
3 5 7 9 11 13 15
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT11722
3
2 VDS=10V
1.00E+01
7
5
3
2
25°C
Tc= --25°C 75°C
1.00E+00
7
5
3
0.1
1000
7
5
3
2
100
7
5
3
2
23
5 7 1.0
2 3 5 7 10
Drain Current,
SW Time
I-D-
-- A
ID
23
IT11724
VDD=200V
VGS=10V
td(off)
tr
td(on)
tf
10
0.1
23
5 7 1.0
2 3 5 7 10
Drain Current, ID -- A
23 5
IT11726
0
--50 --25
5
3 VGS=0V
2
0 25 50 75 100
Case Temperature, Tc -- °C
IS -- VSD
125 150
IT11723
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
10000
7
5
3
2
1000
7
5
3
2
0.4 0.6 0.8 1.0 1.2 1.4
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT11725
f=1MHz
Ciss
Coss
100
7
5
3
2
10
0
Crss
5 10 15 20 25 30 35 40 45 50
Drain-to-Source Voltage, VDS -- V IT11727
No. A1830-3/5

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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