DataSheet.fr

PDF C5548A Fiche technique - Toshiba

Numéro de référence C5548A
Description 2SC5548A
Fabricant Toshiba 
Logo Toshiba Logo 



5 Pages
		

No Preview Available !

C5548A Datasheet, Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548A
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC5548A
Unit: mm
High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A)
High collector breakdown voltage: VCEO = 400 V
High DC current gain: hFE = 40 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
600
400
7
2
4
0.5
1.0
15
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-02-05
C5548A Fiche technique
IC – VCE
2.0
200 150
1.6 100
80
1.2 60
40
0.8 20
IB = 10 mA
0.4
Common emitter
Tc = 25°C
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
10
Common emitter
IC/IB = 8
3
1 Tc = 100°C
0.3 25
55
0.1
0.03
0.01
0.03 0.1 0.3 1 3
Collector current IC (A)
10
2SC5548A
hFE – IC
1000
300
100 Tc = 100°C
25
30
55
10
3 Common emitter
VCE = 5 V
1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
VBE (sat) – IC
10
Common emitter
IC/IB = 8
3
25 55
1
Tc = 100°C
0.3
0.1
0.01
0.03 0.1 0.3
1
Collector current IC (A)
3
IC – VBE
2.0
Common emitter
VCE = 5 V
1.6
1.2
0.8
0.4
Tc = 100°C
25 55
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
1.6
20
16 (1)
12
PC – Ta
(1) Tc = Ta
infinite heat sink
(2) No heat sink
8
4
(2)
0
0 25 50 75 100 125 150 175 200
Ambient temperature Ta (°C)
3 2010-02-05

3 Page




Constitution5 Pages
Télécharger[ C5548A.PDF ]

Liens de partage


Fiche technique recommandé

RéférenceDescriptionFabricant
C55482SC5548Toshiba
Toshiba
C5548A2SC5548AToshiba
Toshiba

RéférenceDescriptionFabricant
H6060Monolithic low-power CMOS device combining a programmable timerEM Microelectronic - MARIN SA
EM Microelectronic - MARIN SA
IT8772EHighly integrated Super I/O using the Low Pin Count InterfaceITE
ITE

Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


www.DataSheet.fr    |   2020   |  Contactez-nous    |   Recherche