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PDF 2N7002DW Fiche technique - Infineon Technologies

Numéro de référence 2N7002DW
Description Small-Signal-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies Logo 

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2N7002DW Datasheet, Description
OptiMOSSmall-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• Fast switching
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
2N7002DW
Product Summary
VDS
RDS(on),max
ID
VGS=10 V
VGS=4.5 V
60 V
3W
4
0.3 A
PG-SOT363
65
4
1
2
3
Type
Package Tape and Reel Information
2N7002DW PG-SOT363 H6327: 3000 pcs/reel
Marking
X8s
HalogenFree Packing
Yes Non Dry
Parameter 1)
Continuous drain current
Pulsed drain current
Symbol Conditions
I D T A=25 °C
T A=70 °C
I D,pulse T A=25 °C
Value
0.30
0.24
1.2
Unit
A
Avalanche energy, single pulse
E AS I D=0.3 A, R GS=25 W
Reverse diode dv /dt
Gate source voltage
dv /dt
V GS
I D=0.3 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
ESD class
JESD22-A114 (HBM)
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Remark: one of both transistors in operation.
1.3 mJ
6
±20
class 0 (<250V)
0.5
-55 ... 150
55/150/56
kV/µs
V
W
°C
Rev.2.3
page 1
2014-09-19
2N7002DW Fiche technique
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
2N7002DW
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=0.5 A, R G,ext=6 W
-
-
-
-
-
-
-
13 20 pF
4.1 6
2.0 3
3.0 4.5 ns
3.3 5
5.5 9
3.1 5
Q gs - 0.05 0.1 nC
Q gd V DD=48 V, I D=0.5 A,
Q g V GS=0 to 10 V
-
-
0.2 0.4
0.4 0.6
V plateau
- 4.0 - V
IS
I S,pulse
T A=25 °C
V SD
V GS=0 V, I F=0.5 A,
T j=25 °C
t rr V R=30 V, I F=0.5 A,
Q rr di F/dt =100 A/µs
- - 0.3 A
- - 1.2
- 0.96 1.2 V
- 8.5 13 ns
- 2.4 4 nC
Rev.2.3
page 3
2014-09-19

3 Page

2N7002DW pdf
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=0.3 A; V GS=10 V
6.0
5.0
4.0
98 %
3.0
2.0
typ
1.0
0.0
-60 -20 20
60 100
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
140
102
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=250 µA
parameter: I D
3.2
2N7002DW
2.8
2.4 98 %
2 typ
1.6
2%
1.2
0.8
0.4
0
-60 -20 20 60 100 140
Tj [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
101
100
0
Rev.2.3
100
Ciss
10-1
150 °C
25 °C
150 °C, 98%
25 °C, 98%
10 20
VDS [V]
Coss
Crss
30
10-2
10-3
0
page 6
0.4 0.8 1.2
VSD [V]
1.6
2014-09-19

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