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PDF S1PM Fiche technique - Vishay Siliconix

Numéro de référence S1PM
Description High Current Density Surface Mount Glass Passivated Rectifiers
Fabricant Vishay Siliconix 
Logo Vishay Siliconix Logo 

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S1PM Datasheet, Description
www.vishay.com
S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
Vishay General Semiconductor
High Current Density Surface Mount
Glass Passivated Rectifiers
eSMP® Series
DO-220AA (SMP)
FEATURES
• Very low profile - typical height of 1.0 mm
Available
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low thermal resistance
• Meets M SL level 1, pe r J- STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material cat egorization: Fo r def initions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV) 1.0
VRRM
A
100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IR 1
VF
TJ max.
Package
μA
0.95 V
150 °C
DO-220AA (SMP)
Diode variations
Single die
TYPICAL APPLICATIONS
General pur pose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - h alogen-free, RoHS-compli ant, and
commercial grade
Base P/NHM3 - ha logen-free, RoHS-c ompliant, a nd
automotive grade
Terminals: Matte tin plated lea ds, soldera ble per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1PB
Device marking code
SB
Max. repetitive peak reverse voltage
Max. RMS voltage
Max. DC blocking voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
100
70
100
Operating junction and storage temperature range
TJ, TSTG
S1PD
SD
200
140
200
S1PG S1PJ
SG SJ
400 600
280 420
400 600
1.0
30
- 55 to + 150
S1PK
SK
800
560
800
S1PM
SM
1000
700
1000
UNIT
V
V
V
A
A
°C
Revision: 14-Aug-13
1 Document Number: 88917
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
S1PM Fiche technique
www.vishay.com
S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
Vishay General Semiconductor
30
25
20
15
10
5
0
1 10 100
Number of Cycles at 50 Hz
Fig. 3 - Max. Non-Repetitive Peak Forward Surge Current
100
10
1
0.1 1 10 100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
100
10 TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.4
TJ = 125 °C
0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
2.0
Fig. 4 - Typical Instantaneous Forward Characteristics
1000
100
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance
100
TJ = 150 °C
10 TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
Revision: 14-Aug-13
3 Document Number: 88917
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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