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PDF IRLR2908PbF Fiche technique - International Rectifier

Numéro de référence IRLR2908PbF
Description Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier Logo 

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IRLR2908PbF Datasheet, Description
PD - 95552A
AUTOMOTIVE MOSFET
IRLR2908PbF
IRLU2908PbF
Features
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
D
VDSS = 80V
RDS(on) = 28m
S ID = 30A
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C junction operating
temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
D-Pak
IRLR2908
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
™Pulsed Drain Current
Maximum Power Dissipation
Max.
39
28
30
150
120
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
™Avalanche Current
hRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
0.77
± 16
180
250
See Fig.12a,12b,15,16
2.3
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
Thermal Resistance
300 (1.6mm from case )
Parameter
Typ.
Max.
RθJC
RθJA
RθJA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
––– 1.3
––– 40
––– 110
I-Pak
IRLU2908
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/7/04
http://www.Datasheet4U.com
IRLR2908PbF Fiche technique
IRLR/U2908PbF
1000
100
10
TOP
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
1
2.5V
0.1
0.01
0.01
20µs PULSE WIDTH
Tj = 25°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
10
2.5V
1
0.1
0.01
20µs PULSE WIDTH
Tj = 175°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
VDS = 25V
20µs PULSE WIDTH
1
2345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
60
TJ = 25°C
50
40
30 TJ = 175°C
20
10
0
0
VDS = 10V
20µs PULSE WIDTH
10 20 30 40 50 60
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
3

3 Page

IRLR2908PbF pdf
IRLR/U2908PbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
400
ID
TOP 9.3A
16A
300 BOTTOM 23A
200
100
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
2.5
2.0
1.5
ID = 250µA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
www.irf.com

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