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PDF SI2305 Fiche technique - HT Semi

Numéro de référence SI2305
Description 20V P-Channel Enhancement Mode MOSFET
Fabricant HT Semi 
Logo HT Semi Logo 



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SI2305 Datasheet, Description
20V P-Channel Enhancement Mode MOSFET
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.8A
RDS(ON), Vgs@-2.5V, Ids@-2.0A
130m
190m
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2305
D
SOT-23(PACKAGE)
GS
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90
1.00
0.10
0.40
0.85
REF.
1.30
0.20
-
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation 2)
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)
TA = 25o
TA = 75oC
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RthJA
Limit
-20
±8
-2.2
-8
1.25
0.8
-55 to 150
100
166
Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
3) Surface Mounted on FR4 Board.
Unit
V
A
W
oC
oC/W
JinYu
semiconductor
www.htsemi.com
http://www.Datasheet4U.com
SI2305 Fiche technique
20V P-Channel Enhancement Mode MOSFET
Output Characteristics_
10
VGS = 5, 4.5, 4, 3.5, 3 V
8 2.5 V
6
4 2V
2
0, 0.5, 1 V
1.5 V
0
012345
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
0.5
0.4
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
0.1
0.0
0
2468
ID - Drain Current (A)
Gate Charge
5
VDS = 6 V
ID = 2.8 A
4
10
3
2
1
0
02468
Qg - Total Gate Charge (nC)
SI2305
Transfer Characteristics
10
8 TC = - 55_C
25_C
6
125_C
4
2
0
0.0
1000
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Capacitance
3.0
800
600
Ciss
400
Coss
Crss
200
0
0369
VDS - Drain-to-Source Voltage (V)
12
On-Resistance vs. Junction Temperature
1.8
VGS = 4.5 V
1.6 ID = 2.8 A
1.4
1.2
1.0
0.8
0.6
- 50
0 50 100
TJ - Junction Temperature (_C)
150
JinYu
semiconductor
www.htsemi.com
http://www.Datasheet4U.com

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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