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PDF 5H0165R Fiche technique ( Data sheet )

Numéro de référence 5H0165R
Description KA5H0165R
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 



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5H0165R Datasheet, Description
www.fairchildsemi.com
KA5x0165Rxx-SERIES
KA5H0165R/RN, KA5M0165R/RN, KA5L0165R/RN,
KA5H0165RVN
Fairchild Power Switch(FPS)
Features
• Precision Fixed Operating Frequency (100/67/50kHz )
• Low Start-up Current (Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 25V)
- except KA5H0165RVN
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM IC. Included
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry
compared to discrete MOSFET and controller or RCC
switching converter solution, The Fairchild Power Switch(FPS)
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system
reliability. It is well suited for cost effective design of flyback
converters.
TO-220F-4L
8-DIP
Internal Block Diagram
1
1. GND
2. Drain
3. Vcc
4. FB
1
1.6.7.8. Drain
2. GND
3. Vcc
4. FB
5. NC
VCC
uA
FB
32V 5V Internal
Vref bias
Good
logic
5µA
7.5V
27V
OSC
S
Q
R
1mA 2.5R
9V 1R
+
L.E.B
0.1V
+
+ Thermal S/D
OVER VOLTAGE S/D
S
Q
R
Power on reset
SFET
DRAIN
GND
©2003 Fairchild Semiconductor Corporation
Rev.1.0.5
Free Datasheet http://www.Datasheet4U.com
5H0165R Fiche technique
KA5X0165RXX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
RDS(ON)
gfs
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Gate-Drain (Miller) Charge
Qgd
Note:
1. Pulse test: Pulse width 300µS, duty cycle 2%
2. S = -1--
R
Condition
Min.
VGS=0V, ID=50µA
650
VDS=Max. Rating, VGS=0V -
VDS=0.8Max. Rating,
VGS=0V, TC=125°C
-
VGS=10V, ID=0.5A
-
VDS=50V, ID=0.5A
0.5
VGS=0V, VDS=25V,
f=1MHz
-
-
-
VDD=0.5B VDSS, ID=1.0A
(MOSFET switching time is
essentially independent of
operating temperature)
-
-
-
-
VGS=10V, ID=1.0A,
VDS=0.5B VDSS (MOSFET
switching time is essentially
independent of operating
temperature)
-
-
-
Typ.
-
-
Max.
-
50
Unit
V
µA
- 200 µA
8 10
--
250 -
25 -
10 -
12 -
4-
30 -
10 -
S
pF
nS
- 21
3 - nC
9-
3
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3 Page

5H0165R pdf
KA5X0165RXX-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
Fig.7 Stop Threshold Voltage
1.15
1.1
1.05
Vstop 1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Temperature [°C]
Figure 7. Stop Threshold Voltage
1.2
1.15
1.1
1.05
Vz 1
0.95
0.9
0.85
0.8
-25
Fig.9 Vcc Zener Voltage
0 25 50 75 100 125 150
Temperature [°C]
Figure 9. VCC Zener Voltage
Fig.11 Shutdown Delay Current
1.2
1.15
1.1
1.05
Idelay 1
0.95
0.9
0.85
0.8
-25 0 25 50 75 100 125 150
Temperature [°C]
Figure 11. Shutdown Delay Current
Fig.8 Maximum Duty Cycle
1.15
1.1
1.05
Dmax 1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Temperature [°C]
Figure 8. Maximum Duty Cycle
Fig.10 Shutdown Feedback Voltage
1.15
1.1
1.05
Vsd 1
0.95
0.9
0.85
-25
0 25 50 75 100 125 150
Temperature [°C]
Figure 10. Shutdown Feedback Voltage
Fig.12 Over Voltage Protection
1.15
1.1
1.05
Vovp 1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Temperature [°C]
Figure 12. Over Voltage Protection
6
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