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PDF IRF6728MPBF Fiche technique - International Rectifier

Numéro de référence IRF6728MPBF
Description Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier Logo 

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IRF6728MPBF Datasheet, Description
PD - 97568
IRF6728MPbF
IRF6728MTRPbF
HEXFET® Power MOSFET plus Schottky Diode ‚
l RoHS Compliant Containing No Lead and Halogen Free
l Integrated Monolithic Schottky Diode

Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Low Profile (<0.7 mm)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
l Dual Sided Cooling Compatible 
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
28nC 8.7nC 3.1nC 29nC 22nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
S
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
DG
D
S
l 100% Rg tested
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6728MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6728MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
23
18 A
140
180
230 mJ
18 A
10
ID = 23A
8
6
4 TJ = 125°C
2 TJ = 25°C
0
2468
10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0 ID= 18A
10.0
8.0
VDS= 24V
VDS= 15V
VDS= 6V
6.0
4.0
2.0
0.0
0
20 40 60 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
1
9/24/10
Free Datasheet http://www.Datasheet4U.com
IRF6728MPBF Fiche technique
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
flJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
IRF6728MTRPbF
Max.
2.1
1.3
75
270
-40 to + 150
Units
W
°C
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
60
–––
–––
1.66
–––
Units
°C/W
W/°C
100
D = 0.50
10 0.20
0.10
0.05
1
0.1
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2
τ2
R3R3
R4R4
τC
Ri (°C/W)
24.84696
τι (sec)
2.379018
τ3 τ4 τ 10.92897 0.219018
τ3 τ4 3.658783 0.00733
20.42272 15.9657
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ
Notes:
ˆ Used double sided cooling , mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Š Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
(still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
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3 Page

IRF6728MPBF pdf
IRF6728MTRPbF
L
VCC
DUT
0
210K S
Fig 15a. Gate Charge Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGSG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+- VDD
Fig 17a. Switching Time Test Circuit
6
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


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