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PDF IRF6617PBF Fiche technique - International Rectifier

Numéro de référence IRF6617PBF
Description Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier Logo 

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IRF6617PBF Datasheet, Description
l RoHS Compliant ‰
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible ‰
l Compatible with existing Surface Mount Techniques ‰
PD -97082
IRF6617PbF
IRF6617TRPbF
DirectFET™ Power MOSFET Š
VDSS
30V
RDS(on) max Qg(typ.)
8.1m@VGS = 10V
10.3m@VGS = 4.5V
11nC
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
ST
DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6617PbF balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that
power the latest generation of processors operating at higher frequencies. The IRF6617PbF has been optimized for param-
eters that are critical in synchronous buck converters including RDS(on) and gate charge to minimize losses in the control FET
sAobckseot.lute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
iContinuous Drain Current, VGS @ 10V
ÃfContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
™Pulsed Drain Current
iPower Dissipation
fPower Dissipation
fPower Dissipation
dSingle Pulse Avalanche Energy
ÙAvalanche Current
Linear Derating Factor
30
±20
55
14
11
120
42
2.1
1.4
27
12
0.017
V
A
W
mJ
A
W/°C
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
-40 to + 150
°C
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
fjJunction-to-Ambient
gjJunction-to-Ambient
hjJunction-to-Ambient
ijJunction-to-Case
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Notes  through Š are on page 2
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1
5/3/06
Free Datasheet http://www.Datasheet4U.com
IRF6617PBF Fiche technique
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1
0.1
0.1
2.5V
1
60µs PULSE WIDTH
Tj = 25°C
10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
100.0
10.0 TJ = 150°C
TJ = 25°C
1.0
0.1
1.0
VDS = 15V
60µs PULSE WIDTH
2.0 3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
6.0
Fig 3. Typical Transfer Characteristics
IRF6617PbF
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
1
0.1
2.5V 60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 15A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
12
ID= 12A
10
8
6
4
VDS= 24V
VDS= 15V
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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2
0
0 5 10 15 20 25 30
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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3 Page

IRF6617PBF pdf
IRF6617PbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
di/dt controlled by RG
Driver same type as D.U.T.
VDD +
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductoorr CCuurrernetnt
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
S
G
S
D
D
D
6
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