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PDF IRF6616PBF Fiche technique - International Rectifier

Numéro de référence IRF6616PBF
Description Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier Logo 

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IRF6616PBF Datasheet, Description
l RoHS compliant containing no lead or bormide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l Lead-Free
PD - 96100
IRF6616PbF
IRF6616TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
40V max ±20V max 3.7m@ 10V 4.6m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
29nC 9.4nC 2.4nC 33nC 15nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
MX
MP
DirectFET™ ISOMETRIC
Description
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low
combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be
used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
40
±20
19
15
106
150
36
15
Units
V
A
mJ
A
12
10 ID = 19A
8.0 TJ = 125°C
6.0
4.0
2.0
0
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
5 ID= 15A VDS = 32V
4 VDS= 20V
3
2
1
0
0 10 20 30
QG Total Gate Charge (nC)
40
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.32mH, RG = 25, IAS =15A.
1
05/23/07
Free Datasheet http://www.Datasheet4U.com
IRF6616PBF Fiche technique
IRF6616PbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
™Power Dissipation
™Power Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
™gJunction-to-Ambient
dgJunction-to-Ambient
egJunction-to-Ambient
fgJunction-to-Case
Junction-to-PCB Mounted
™ÃLinear Derating Factor
Max.
2.8
1.8
89
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
W
°C
Units
°C/W
W/°C
100
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
CiC= iτiRi/iRi
R2R 2
τ2 τ2
R 3R 3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
R 4R 4
τAτA
τ4 τ4
Ri (°C/W)
1.2801
8.7256
21.750
τi (sec)
0.000322
0.164798
2.25760
13.251 69
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
 Surface mounted on 1 in. square Cu board, steady state.
‚ Used double sided cooling , mounting pad.
ƒ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.

„ TC measured with thermocouple incontact with top (Drain) of part.
… Rθ is measured at TJ of approximately 90°C.
 Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
ƒ Mounted to a PCB with
small clip heatsink (still air)
ƒ Mounted on minimum
footprint full size board with
metalized back and with
small clip heatsink (still air)
3
Free Datasheet http://www.Datasheet4U.com

3 Page

IRF6616PBF pdf
IRF6616PbF
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGSG
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 17a. Switching Time Test Circuit
6
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com
Free Datasheet http://www.Datasheet4U.com

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