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PDF IRF6614PBF Fiche technique - International Rectifier

Numéro de référence IRF6614PBF
Description Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier Logo 

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IRF6614PBF Datasheet, Description
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD -97090
IRF6614PbF
IRF6614TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
40V max ±20V max 5.9m@ 10V 7.1m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
ST
DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
generation of processors operating at higher frequencies. The IRF6614PbF has been optimized for parameters that are critical in
synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET
socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
40 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
20
16
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
ID = 12.7A
12
10 ID= 10.2A
8
±20
12.7
10.1
55
102
22
10.2
VDS= 32V
VDS= 20V
A
mJ
A
12 TJ = 125°C 6
8 TJ = 25°C
4
2
4
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
0
0 10 20 30 40 50
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.43mH, RG = 25, IAS = 10.2A.
1
5/5/06
Free Datasheet http://www.Datasheet4U.com
IRF6614PBF Fiche technique
IRF6614PbF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
flJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
Max.
2.1
1.4
42
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.0
–––
Units
W
°C
Units
°C/W
W/°C
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01 SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
R1R1
R2R2
R3R3
R4R4
R5R5
Ri (°C/W) τi (sec)
τJτJ τCτ 0.6676 0.000066
τ1 τ1
τ2 τ2
τ3 τ3
τ4 τ4
τ5 τ5
1.0462 0.000896
CiC= iτ=iRi/iRi
1.5611
29.282
0.004386
0.68618
25.455 32
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
ƒ Surface mounted on 1 in. square Cu board, steady state.
‰ Mounted on minimum footprint full size board with metalized
„ TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
ˆ Used double sided cooling, mounting pad with large heatsink.
Š Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
Free Datasheet http://www.Datasheet4U.com

3 Page

IRF6614PBF pdf
IRF6614PbF
L
VCC
DUT
0
1K
Vds
Vgs(th)
Id
Vgs
Fig 15a. Gate Charge Test Circuit
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGGS
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16b. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 17a. Switching Time Test Circuit
6
V(BR)DSS
tp
IAS
Fig 16c. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com
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