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PDF 18T10AGH Fiche technique ( Data sheet )

Numéro de référence 18T10AGH
Description AP18T10AGH
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics Logo 



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18T10AGH Datasheet, Description
Advanced Power
Electronics Corp.
AP18T10AGH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
Halogen Free & RoHS Compliant Product
G
Description
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
100V
160mΩ
9A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
9
5.6
30
27.8
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
4.5
62.5
Units
/W
/W
Data and specifications subject to change without notice
1
201006011
Free Datasheet http://www.datasheet4u.net/
18T10AGH Fiche technique
20
T C = 25 o C
16
12
10V
7.0V
6.0V
5.0V
8
V G = 4.0V
4
0
0246
V DS , Drain-to-Source Voltage (V)
8
Fig 1. Typical Output Characteristics
200
I D =1A
T C =25 o C
180
160
140
120
100
2468
V GS Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j =150 o C
T j =25 o C
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP18T10AGH-HF
16
T C = 150 o C
12
8
10V
8.0V
7.0V
6.0V
V G = 5.0V
4
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =5A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
Free Datasheet http://www.datasheet4u.net/

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