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PDF TLP291 Fiche technique - Toshiba

Numéro de référence TLP291
Description PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
Fabricant Toshiba 
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TLP291 Datasheet, Description
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP291
TLP291
Power Supplies
Programmable Controllers
Hybrid ICs
Unit: mm
TLP291 consists of photo transistor, optically coupled to a gallium arsenide
infrared emitting diode. TLP291 is housed in the SO4 package, very small
and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
z Collector-Emitter Voltage : 80 V (min)
z Current Transfer Ratio
Rank GB
: 50% (min)
: 100% (min)
z Isolation Voltage
: 3750 Vrms (min)
z Operation temperature: -55 to 110 ˚C
z UL recognized
: UL1577, File No. E67349
z cUL approved
: CSA Component Acceptance Service No.5A,
File No. 67349
z SEMKO aprroved:
EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
z BSI approved
: BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
z Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When a EN 60747-5-5 approved type is needed,
please designate the “Option(V4)”
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
Pin Configuration
TLP291
14
23
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
Construction Mechanical Rating
Creepage distance:5.0mm(min)
Clearance:5.0mm(min)
Insultion thickness:0.4mm(min)
1 2012-04-26
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TLP291 Fiche technique
TLP291
Absolute Maximum Ratings (Note)( Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
SYMBOL
NOTE
RATING
UNIT
Input forward current
IF 50 mA
Input forward current derating (Ta90°C)
IF /ΔTa
-1.5 mA /°C
Input forward current (pulsed )
IFP (Note 2) 1 A
Input reverse voltage
VR 5 V
Input power dissipation PD 100 mW
Input power dissipation derating (Ta 90°C)
ΔPD/ΔTa
-3.0 mW/°C
Junction temperature
Tj 125 °C
Collector-emitter voltage
VCEO
80 V
Emitter-collector voltage
VECO
7V
Collector current
IC 50 mA
Collector power dissipation
Collector power dissipation derating(Ta25°C)
PC
PC /ΔTa
150 mW
-1.5 mW /°C
Junction temperature
Tj 125 °C
Operating temperature range
Topr
-55 to 110
°C
Storage temperature range
Tstg
-55 to 125
°C
Lead soldering temperature
Tsol
260 (10s)
°C
Total package power dissipation
Total package power dissipation derating(Ta25°C)
PT
PT /ΔTa
200 mW
-2.0 mW /°C
Isolation voltage
BVS
(Note3)
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width 100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.60%, Device considered a two terminal device: LED side pins shorted together and
DETECTOR side pins shorted together.
Electrical Characteristics (Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Input forward voltage
Input reverse current
Input capacitance
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Dark current
Collector-emitter capacitance
SYMBOL
TEST CONDITION
VF IF = 10 mA
IR VR = 5 V
CT V = 0 V, f = 1 MHz
V(BR) CEO
V(BR) ECO
ICEO
CCE
IC = 0.5 mA
IE = 0.1 mA
VCE = 48 V
VCE = 48 V, Ta = 85°C
V = 0 V, f = 1 MHz
MIN TYP. MAX UNIT
1.1 1.25 1.4
- -5
V
μA
- 30 - pF
80 - - V
7- -V
- 0.01 0.08 μA
- 2 50 μA
- 10 - pF
3 2012-04-26
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TLP291 pdf
IC-VCE
50
PC (max)
Ta=25˚C
40
50
30
30 2 0
15
20 1 0
10
IF=5mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
100
Ta=25˚C
IC-IF
10
1
0.1
0.1
VCE=10V
VCE=5V
VCE=0.4V
1 10 100
Input forward voltage IF (mA)
IC/IF -IF
1000
VCE=10V
VCE=5V
VCE=0.4V
100
TLP291
IC-VCE
30
Ta=25˚C
25
20 5 0
30
15 2 0
15
10 1 0
5
5
I F= 2 m A
0
0 0.2 0.4 0.6 0.8 1
Collector-emitter voltage VCE (V)
I C E O - Ta
10
1
0.1
0.01
0.001
VCE=48V
24V
10V
5V
0.0001
0
20 40 60 80 100
Ambient temperature Ta (°C)
120
10
0.1
1 10
Input forward current IF (mA)
100
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
6 2012-04-26
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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