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PDF MJ8501 Fiche technique - Inchange Semiconductor

Numéro de référence MJ8501
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
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MJ8501 Datasheet, Description
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage
1400
V
VCEO(SUS) Collector-Emitter Voltage
800 V
VEBO Emitter-Base Voltage
8V
IC Collector Current-Continuous
2.5 A
ICM Collector Current-Peak
5A
IBB Base Current-Continuous
2A
IBM Base Current-Peak
4A
PC Collector Power Dissipation@TC=25125
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.4
UNIT
/W
isc Product Specification
MJ8501
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/



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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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