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PDF SI2301CDS Fiche technique ( Data sheet )

Numéro de référence SI2301CDS
Description P-Channel 20 V (D-S) MOSFET
Fabricant Vishay 
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SI2301CDS Datasheet, Description
P-Channel 20 V (D-S) MOSFET
Si2301CDS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
0.112 at VGS = - 4.5 V
- 3.1
- 20
0.142 at VGS = - 2.5 V
- 2.7
Qg (Typ.)
3.3 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
APPLICATIONS
• Load Switch
G1
S2
3D
Top View
Si2301CDS (N1)*
* Marking Code
Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free)
Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
VGS
ID
IDM
IS
TC = 25 °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
- 20
±8
- 3.1
- 2.5
- 2.3b, c
- 1.8b, c
- 10
- 1.3
- 0.72b, c
1.6
1.0
0.86b, c
0.55b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
5 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Document Number: 68741
S10-2430-Rev. C, 25-Oct-10
Symbol
RthJA
RthJF
Typical
120
62
Maximum
145
78
Unit
°C/W
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SI2301CDS Fiche technique
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
VGS = 5 V thru 2.5 V
VGS = 2 V
1.00
8
0.75
6
VGS = 1.5 V
0.50
4
2
0
0.0
0.20
VGS = 1 V
0.5 1.0 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
0.25
0.00
0.0
800
Si2301CDS
Vishay Siliconix
TC = - 55 °C
TC = 25 °C
TC = 125 °C
0.3 0.6 0.9 1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
0.15
0.10
0.05
VGS = 2.5 V
VGS = 4.5 V
0.00
0 2 4 6 8 10
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 3 A
6
VDS = 5 V
VDS = 10 V
4
VDS = 15 V
2
0
02468
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68741
S10-2430-Rev. C, 25-Oct-10
10
600
Ciss
400
200
Crss
0
0
Coss
5
10
15
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
ID = 2.8 A
1.3
20
1.1
VGS = 4.5 V
0.9
0.7
- 50
VGS = 1.8 V
- 25 0 25
50
75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SI2301CDS pdf
SOT-23 (TO-236): 3-LEAD
b
Package Information
Vishay Siliconix
3
E1 E
12
S
A A2
A1
e
e1
D
0.10 mm C
0.004"
Seating Plane
C
C
q
L
L1
0.25 mm
Gauge Plane
Seating Plane
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
S
q
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
MILLIMETERS
Min Max
0.89 1.12
0.01 0.10
0.88 1.02
0.35
0.085
2.80
2.10
0.50
0.18
3.04
2.64
1.20 1.40
0.95 BSC
1.90 BSC
0.40 0.60
0.64 Ref
0.50 Ref
3° 8°
Min
0.035
0.0004
0.0346
0.014
0.003
0.110
0.083
0.047
0.016
3°
INCHES
0.0374 Ref
0.0748 Ref
0.025 Ref
0.020 Ref
Max
0.044
0.004
0.040
0.020
0.007
0.120
0.104
0.055
0.024
Document Number: 71196
09-Jul-01
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