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PDF SI2301ADS Fiche technique ( Data sheet )

Numéro de référence SI2301ADS
Description P-Channel 2.5-V (G-S) MOSFET
Fabricant Vishay 
Logo Vishay Logo 



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SI2301ADS Datasheet, Description
New Product
P-Channel 2.5-V (G-S) MOSFET
Si2301ADS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.130 @ VGS = –4.5 V
–20
0.190 @ VGS = –2.5 V
ID (A)b
–2.0
–1.6
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2301DS (1A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–2.0
–1.6
–0.75
0.9
0.57
–20
"8
–10
–55 to 150
–1.75
–1.4
–0.6
0.7
0.45
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
RthJA
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71835
S-20617—Rev. B, 29-Apr-02
Typical
115
140
Maximum
140
175
Unit
_C/W
www.vishay.com
1
Free Datasheet http://www.datasheet4u.com/
SI2301ADS Fiche technique
New Product
Si2301ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 5, 4.5, 4, 3.5, 3 V
2.5 V
8
10
8
66
2V
44
Transfer Characteristics
TC = 55_C
25_C
125_C
2
0, 0.5, 1 V
1.5 V
0
012345
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
0.5
0.4
0.3
0.2 VGS = 2.5 V
VGS = 4.5 V
0.1
0.0
0
2468
ID Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 3.6 A
4
10
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS Gate-to-Source Voltage (V)
Capacitance
800
600
Ciss
400
200
Coss
Crss
0
0
4
8 12 16
VDS Drain-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 3.6 A
1.4
3 1.2
2 1.0
1 0.8
0
01234
Qg Total Gate Charge (nC)
Document Number: 71835
S-20617Rev. B, 29-Apr-02
5
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
www.vishay.com
3
Free Datasheet http://www.datasheet4u.com/

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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