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PDF SI2301 Fiche technique ( Data sheet )

Numéro de référence SI2301
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant MCC 
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SI2301 Datasheet, Description
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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SI2301
Features
-20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V
RDS(ON)=150mΩ@VGS=-2.5V
High dense cell design for extremely low RDS(ON)
Rugged and reliable
High Speed Switching
SOT-23 Package
Marking Code: S1
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
PD
RθJA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambientb
Operating Junction Temperature
Storage Temperature
Rating
-20
-2.8
-10
±8
1.25
100
-55 to +150
-55 to +150
Internal Block Diagram
D
G
S
Unit
V
A
A
V
W
/W
P-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
CB
2. SOURCE
3. DRAIN
12
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 5
2011/01/01
Free Datasheet http://www.datasheet4u.com/
SI2301 Fiche technique
MCC
TM
Micro Commercial Components
10
-VGS=4.5,4,3,V
8
-VGS=2.5V
6
4 -VGS=2.0V
2
-VGS=1.5V
0
012345
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
800
Ciss
600
400
Coss
200 Crss
0
02
4
6
8 10
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
SI2301
10
25 C
8
6
4
2
0
0.0
TJ=125 C
0.5 1.0
-55 C
1.5 2.0 2.5
3.0
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-2.8A
1.9 VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
Revision: A
www.mccsemi.com
3 of 5
2011/01/01

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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