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PDF KIA65N06 Fiche technique ( Data sheet )

Numéro de référence KIA65N06
Description 60V N-CHANNEL MOSFET
Fabricant KIA 
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KIA65N06 Datasheet, Description
KIA
SEMICONDUCTORS
60V
N-CHANNEL MOSFET
65N06
1.Description
These N-Channel enhancement mode power field effect transistors are produced using
KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse
in the avalanche and commutation mode. These devices are well suited for low voltage applications such
as automotive, DC/DC converters, and high efficiency switching for power management in portable and
battery operated products.
2. Features
„ 65A, 60V, RDS(on)= 0.016@VGS= 10 V
„ Low gate charge ( typical 48nC)
„ Low Crss ( typical 32.5pF)
„ Fast switching
„ 100% avalanche tested
„ Improved dv/dt capability
„ 175º maximum junction temperature rating
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3. Pin configuration
Pin
1
2
3
4
1 of 7
Function
Gate
Drain
Source
Drain
Datasheet pdf - http://www.DataSheet4U.co.kr/
KIA65N06 Fiche technique
KIA
SEMICONDUCTORS
60V
N-CHANNEL MOSFET
65N06
6. Electrical characteristics
(TJ=25°C,unless otherwise notes)
Parameter
Symbol
Conditions
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
Breakdown voltage temperature
coefficient
BVDSS
ΔBVDSS/ΔTJ
VGS=0V,ID=250μA
ID=250μA,
referenced to 25 ºC
60
0.07
V
V/ºC
Zero gate voltage drain current
Gate-body leakage
current
On characteristics
Forward
Reverse
IDSS
IGSSF
IGSSR
VDS=60V ,VGS=0V
VDS=48V ,TC=150ºC
VGS=20V,VDS=0V
VGS=-20V,VDS=0V
1
10
100
-100
μA
μA
nA
nA
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
Dynamic characteristics
VGS(th)
RDS(on)
gFS
VDS=VGS, ID=250μA
VGS=10V,ID=39A
VDS=25V, ID=32.5A (note4)
2.0 4.0
0.015 0.016
100
V
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
Ciss
Coss
Crss
VDS=25V,VGS=0V,f=1.0MHz
2000
450
32.5
pF
pF
pF
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
tf
VDD=30V,ID=39A,RG=4.7
RD=0.77,VGS=10V
(note4,5)
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Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
Qgd
VDS=30V, ID=39A,VGS=10V,
(note4,5)
Drain-source diode characteristics and maximum rating
12
33
41
12
40
8
12
ns
ns
ns
ns
nC
nC
nC
Maximum continuous drain-source
diode forward current
IS
65 A
Maximum pulsed drain-source diode
forward current
ISM
260 A
Drain-source diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD
trr
Qrr
VGS=0V,IS=65A
VGS=0V,IS=65A
dIF/dt=100A/μs (note4)
1.5 V
60 ns
100 μC
Note:1.repetitive rating:pulse width limited by maximum junction temperature
2.L=180μH,IAS=65A,VDD=25V,RG=25,staring TJ=25ºC
3.ISD<65A,di/dt<100A/μs,VDD<BVDSS,staring TJ=25 ºC
4.Pulse test:pulse width<300μs,duty cycle<2%
5.Essentially independent of operating temperature
3 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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KIA65N06 pdf
KIA
SEMICONDUCTORS
60V
N-CHANNEL MOSFET
65N06
www.DataSheet.net/
6 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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