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PDF 5HB03N8 Fiche technique ( Data sheet )

Numéro de référence 5HB03N8
Description 30V SO8 Complementary enhancementmode MOSFET H-Bridge
Fabricant Winsemi 
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5HB03N8 Datasheet, Description
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5HB03N8
30V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS
N-CH
30V
P-CH
-30V
QG
9.0nC
RDS(on)
25mΩ @ VGS= 10V
ID
TA= 25°C
5.0A
45mΩ @ VGS= 4.5V
3.9A
12.7nC
50mΩ @ VGS= -10V
75mΩ @ VGS= -4.5V
-4.1A
-3.3A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
2 x N + 2 x P channels in a SOIC package
Low voltage (VGS = 4.5 V) gate drive
Applications
DC Motor control
DC-AC Inverters
P1G
P1D/N1D
N1G
P1S/P2S
N1S/N2S
P2G
P2D/N2D
N2G
Ordering information
Device
Reel size
(inches)
5HB03N8
13
Tape width Quantity
(mm)
per reel
12 2,500
Device marking
WFS
5HB03N8
Issue 1.0 - April 2010
1
5HB03N8 Fiche technique
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Thermal characteristics
5HB03N8
R
DS(ON)
10 Limited
R
DS(ON)
10 Limited
1 DC
1s
100m
100ms
10ms
Note (a)
10m Single Pulse, T =25°C
amb
1ms
100us
0.1 1 10
V Drain-Source Voltage (V)
DS
N-channel Safe Operating Area
1 DC
1s
100m
100ms
10ms
Note (a)
1ms
100us
10m Single Pulse, T =25°C
amb
0.1 1 10
-V Drain-Source Voltage (V)
DS
P-channel Safe Operating Area
140 One Active Die
120 25 x 25mm 1oz
100
80 D=0.5
60
40 D=0.2
20
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
1.0
Any one
active die
0.5
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
100 One Active Die
Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10
Pulse Width (s)
100
Pulse Power Dissipation
1k
Issue 1.0 - April 2010
3

3 Page

5HB03N8 pdf
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
N-channel typical characteristics –continued
5HB03N8
600
400
300
C
ISS
GS
C
OSS
C
0
1
10
V - Drain - Source Voltage (V)
DS
Capacitance v Drain-Source Voltage
10
9 I = 5A
D
7
6
5
4
V = 15V
DS
1
0
01 2 34 5 6 7 8
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
9
Test circuits
VG QGS
QG
QGD
Charge
Basic gate charge waveform
VDS
90%
10%
VGS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
Current
regulator
12V 50k Same as
D.U.T
IG
D.U.T
VGS
VDS
ID
Gate charge test circuit
VGS
RG
RD
VDS
VDD
Switching time test circuit
Issue 1.0 - April 2010
6

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