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PDF W21NM60N Fiche technique ( Data sheet )

Numéro de référence W21NM60N
Description STW21NM60N
Fabricant STMicroelectronics 
Logo STMicroelectronics Logo 



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W21NM60N Datasheet, Description
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STP/F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600V - 0.17- 17A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
650V
650V
650V
650V
650V
< 0.22
< 0.22
< 0.22
< 0.22
< 0.22
17A
17A
17A(1)
17A
17A
1. Limited by wire bonding
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
April 2007
Marking
B21NM60N
B21NM60N
F21NM60N
P21NM60N
W21NM60N
Package
D2PAK
I2PAK
TO-220FP
TO-220
TO-247
Rev 6
Packaging
Tape & reel
Tube
Tube
Tube
Tube
1/18
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W21NM60N Fiche technique
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STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
TO-220/D2PAK
I2PAK / TO-247
TO-220FP
VDS
VGS
ID
ID
IDM (2)
PTOT
dv/dt(3)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
Viso
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 17A, di/dt 480A/µs, VDD =80% V(BR)DSS
600
±25
17
10
68
140
1.12
15
17(1)
10(1)
68(1)
30
0.23
-- 2500
–55 to 150
150
Unit
V
V
A
A
A
W
W/°C
V/ns
V
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
TO-220/D²PAK
I²PAK / TO-247
TO-220FP
0.89
62.5
4.21
300
Unit
°C/W
°C/W
°C
Table 3.
Symbol
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Max value
8.5
610
Unit
A
mJ
3/18
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W21NM60N pdf
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Electrical characteristics
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 2. Thermal impedance for TO-220 /
D²PAK / I²PAK
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Safe operating area for TO-247
Figure 6. Thermal impedance for TO-247
6/18
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