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Numéro de référence P9NK50Z
Description STP9NK50Z
Fabricant STMicroelectronics 
Logo STMicroelectronics Logo 



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P9NK50Z Datasheet, Description
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STP9NK50Z - STP9NK50ZFP
STB9NK50Z - STB9NK50Z-1
N-CHANNEL 500V - 0.72- 7.2A TO-220/FP/D2PAK/I2PAK
Zener-Protected SuperMESH™ MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP9NK50Z
STP9NK50ZFP
STB9NK50Z
STB9NK50Z-1
500 V
500 V
500 V
500 V
< 0.85
< 0.85
< 0.85
< 0.85
7.2 A
7.2 A
7.2 A
7.2 A
110 W
30 W
110 W
110 W
s TYPICAL RDS(on) = 0.72
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
STP9NK50Z
P9NK50Z
STP9NK50ZFP
P9NK50ZFP
STB9NK50ZT4
B9NK50Z
STB9NK50Z-1
B9NK50Z
June 2004
PACKAGE
TO-220
TO-220FP
D2PAK
I2PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
1/13
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P9NK50Z Fiche technique
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STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100µA
3 3.75 4.5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.6 A
0.72 0.85
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 3.6 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 400V
Test Conditions
VDD = 250 V, ID = 3.6 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 7.2 A,
VGS = 10V
Min.
Typ.
5.3
910
125
30
75
Typ.
17
20
32
6
18
Max.
Max.
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 250 V, ID = 3.6 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400V, ID = 7.2 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
45
22
15
13
30
Max.
Unit
V
µA
µA
µA
V
Unit
S
pF
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
7.2
28.8
A
A
VSD (1) Forward On Voltage
ISD = 7.2 A, VGS = 0
1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7.2 A, di/dt = 100A/µs
VDD = 40 V, Tj = 150°C
(see test circuit, Figure 5)
238 ns
1.5 µC
12.6 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/13
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P9NK50Z pdf
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STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/13
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