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PDF SI2300DS Fiche technique ( Data sheet )

Numéro de référence SI2300DS
Description N-Channel 30-V (D-S) MOSFET
Fabricant Vishay Siliconix 
Logo Vishay Siliconix Logo 



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SI2300DS Datasheet, Description
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New Product
Si2300DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.068 at VGS = 4.5 V
30
0.085 at VGS = 2.5 V
ID (A)
3.6a
3.4
Qg (Typ.)
3 nC
TO-236
(SOT-23)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter for Portable Devices
• Load Switch
G1
S2
3D
Top View
Si2300DS (P2)*
* Marking Code
Ordering Information: Si2300DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
30
± 12
3.6a
3.0
3.1b, c
2.5b, c
15
1.4
0.9b, c
1.7
1.1
1.1b, c
0.7b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Symbol
RthJA
RthJF
Document Number: 65701
S10-0111-Rev. A, 18-Jan-10
Typical
90
60
Maximum
115
75
Unit
°C/W
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SI2300DS Fiche technique
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New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
VGS = 5 V thru 3 V
12
5
4
VGS = 2.5 V
93
Si2300DS
Vishay Siliconix
TC = 125 °C
6
VGS = 2 V
3
0
0.0
0.20
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
0.16
2
TC = 25 °C
1
TC = - 55 °C
0
0.0 0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
450
Ciss
360
2.5
0.12
0.08
0.04
VGS = 2.5 V
VGS = 4.5 V
0.00
0 3 6 9 12 15
ID - DrainCurrent(A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 3.1 A
8
VDS = 7.5 V
6
VDS = 15 V
4
VDS = 24 V
2
0
02468
Qg - Total Gate Charge (nC)
Gate Charge
270
180
Coss
90
0 Crss
0
5
10 15 20 25
VDS - Drain-to-SourceVoltage (V)
Capacitance
30
1.7
ID = 2.9 A
1.6
1.5
VGS = 4.5 V
VGS = 2.5 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65701
S10-0111-Rev. A, 18-Jan-10
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SI2300DS pdf
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New Product
Si2300DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 130 °C/W
3. TJM - T A = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65701.
www.vishay.com
6
Document Number: 65701
S10-0111-Rev. A, 18-Jan-10
Datasheet pdf - http://www.DataSheet4U.net/

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