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PDF SI2305CDS Fiche technique - Vishay Siliconix

Numéro de référence SI2305CDS
Description P-Channel 8 V (D-S) MOSFET
Fabricant Vishay Siliconix 
Logo Vishay Siliconix Logo 



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SI2305CDS Datasheet, Description
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P-Channel 8 V (D-S) MOSFET
Si2305CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.035 at VGS = - 4.5 V
- 8 0.048 at VGS = - 2.5 V
0.065 at VGS = - 1.8 V
ID (A)d
- 5.8
- 5.0
- 4.3
Qg (Typ.)
12 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2305CDS (N5)*
* Marking Code
Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converter
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
-8
±8
- 5.8
- 4.7
- 4.4a, b
- 3.5a, b
- 20
- 1.4
- 0.8a, b
1.7
1.1
0.96a, b
0.62a, b
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. TC = 25 °C.
t5s
Steady State
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
Symbol
RthJA
RthJF
Typical
100
60
Maximum
130
75
Unit
°C/W
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SI2305CDS Fiche technique
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Si2305CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 5
VGS = 5 V thru 2 V
15
4
3
10
VGS = 1.5 V
2
5
VGS = 1 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS -- Drain-to-Source Voltage (V)
Output Characteristics
1
0
0.0
0.15
1800
TC = 125 °C
TC = - 55 °C
TC = 25 °C
0.3 0.6 0.9 1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
0.12
0.09
VGS = 1.8 V
0.06
0.03
VGS = 2.5 V
VGS = 4.5 V
0.00
0
5 10 15 20
ID -- Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 4.4 A
6
VDS = 2 V
4
VDS = 4 V
VDS = 6.4 V
2
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
1500
1200
Ciss
900
600
Crss
300
Coss
0
0246
VDS - Drain-to-Source Voltage (V)
Capacitance
8
1.4
ID = 4.4 A
1.3
1.2
VGS = 2.5 V
VGS = 4.5 V, 1.8 V
1.1
1.0
0.9
0.8
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
www.vishay.com
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SI2305CDS pdf
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Si2305CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 175 °C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64847.
www.vishay.com
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Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
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