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PDF SI2305ADS Fiche technique - Vishay Siliconix

Numéro de référence SI2305ADS
Description P-Channel 8-V (D-S) MOSFET
Fabricant Vishay Siliconix 
Logo Vishay Siliconix Logo 



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SI2305ADS Datasheet, Description
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Si2305ADS
Vishay Siliconix
P-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = - 4.5 V
- 8 0.060 at VGS = - 2.5 V
0.088 at VGS = - 1.8 V
ID (A)
- 4.1
- 3.4
- 2.0
Qg (Typ.)
7.8 nC
TO-236
(SOT-23)
G1
S2
3D
FEATURES
Halogen-free Option Available
TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Load Switch
• DC/DC Converter
S
G
Top View
Si2305ADS (A5)*
* Marking Code
Ordering Information: Si2305ADS-T1-E3 (Lead (Pb)-free)
Si2305ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
Limit
-8
±8
- 5.4
- 4.3
- 4.1a, b
- 3.3a, b
- 10
- 1.4
- 0.8a, b
1.7
1.1
0.96a, b
0.62a, b
- 50 to 150
260
RoHS
COMPLIANT
Unit
V
A
W
°C
Document Number: 69940
S-82713-Rev. C, 10-Nov-08
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SI2305ADS Fiche technique
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12 12
VGS = 4.5 thru 2 V
9
9
Si2305ADS
Vishay Siliconix
6 VGS = 1.5 V
3
VGS = 0.5 V
VGS = 1 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.10
6
3
0
0.0
1200
TC = 125 °C
TC = 25 °C
TC = - 55 °C
0.5 1.0 1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.0
0.08
VGS = 1.8 V
0.06
0.04
VGS = 2.5 V
VGS = 4.5 V
0.02
0 2 4 6 8 10
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
4.5
ID = 4.1 A
3.6
VDS = 4 V
2.7 VDS = 6.4 V
1.8
0.9
0.0
0.0
1.5 3.0 4.5 6.0 7.5
Qg - Total Gate Charge (nC)
Gate Charge
9.0
Document Number: 69940
S-82713-Rev. C, 10-Nov-08
900
600
300
0
0
1.5
Ciss
Coss
Crss
246
VDS - Drain-to-Source Voltage (V)
Capacitance
8
1.3 VDS = 2.5 V, ID = 3.4 A
1.1 VDS = 4.5 V, ID = 4.1 A
0.9
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SI2305ADS pdf
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Si2305ADS
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 175 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69940.
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Document Number: 69940
S-82713-Rev. C, 10-Nov-08
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