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Naina Semiconductor Ltd.
400NS(R)
Standard Recovery Diodes (Stud and Flat Base Type)
Features
• Diffused Series
• Industrial grade
• Available in Normal and Reverse polarity
• Metric and UNF thread type
Electrical Specifications (TE = 250C, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV)
Maximum avg. forward current @ TE
= 150OC
400
A
VFM
Maximum peak forward voltage drop
@ rated IF(AV)
1.4
V
IFSM
Maximum peak one cycle (non-rep)
surge current @ 10 msec
8250 A
IFRM
Maximum peak repetitive surge
current
16000 A
I2t
Maximum I2t rating (non-rep) for 5 to
10 msec
340000 A2sec
DO-205AB (DO-9)
Electrical Ratings (TE = 250C, unless otherwise noted)
Type Voltage
number Code
VRRM, Maximum
repetitive peak
reverse voltage
(V)
VR(RMS), Maximum
RMS reverse
voltage
(V)
400NS(R)
10
20
40
60
80
100
120
140
160
100
200
400
600
800
1000
1200
1400
1600
70
140
280
420
560
700
840
980
1120
VR, Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
IR(AV), Maximum
avg. reverse
leakage current
(µA)
200