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Numéro de référence NTP18N06
Description Power MOSFET
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NTP18N06 Datasheet, Description
NTP18N06, NTB18N06
Power MOSFET
15 A, 60 V, N−Channel TO−220 & D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
N−Channel
Typical Applications
D
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Pb−Free Packages are Available
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 mW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp v 10 ms)
Drain Current
− Continuous @ TC = 25°C
− Continuous @ TC = 100°C
− Single Pulse (tp v 10 ms)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID 15 Adc
ID 8.0 Adc
IDM 45 Apk
PD 48.4 W
0.32 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to °C
+175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, VDS = 60 Vdc,
IL(pk) = 11 A, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, (1/8from case for 10 s)
EAS 61 mJ
RqJC
RqJA
TL
°C/W
3.1
72.5
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
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V(BR)DSS
60 V
RDS(on) TYP
90 mW @ 10 V
ID MAX
15 A
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
4
12
3
D2PAK
CASE 418AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx18N06G
AYWW
1
Gate
3
Source
2
Drain
NTx
18N06G
AYWW
12 3
Gate Drain Source
NTx18N06
x
A
Y
WW
G
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
1
Publication Order Number:
NTP18N06/D
NTP18N06 Fiche technique
NTP18N06, NTB18N06
32
VGS = 10 V
9V
24
8V
7V
6.5 V
16 6 V
5.5 V
8 5V
4.5 V
0
01 2 34 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
32
VDS 10 V
24
16
TJ = 25°C
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8
TJ = 100°C
0
34
TJ = −55°C
56
7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
0.2
0.16
VGS = 10 V
0.12
0.08
0.04
TJ = 100°C
TJ = 25°C
TJ = −55°C
0
0 4 8 12 16 20 24 28 32
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.2
0.16
VGS = 15 V
0.12
0.08
0.04
TJ = 100°C
TJ = 25°C
TJ = −55°C
0
0 4 8 12 16 20 24 28 32
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 7.5 A
1.8 VGS = 10 V
1.6
1.4
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
VGS = 0 V
100
TJ = 150°C
10
TJ = 100°C
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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NTP18N06 pdf
NTP18N06, NTB18N06
SAFE OPERATING AREA
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
1 ms
10 ms
100 ms
1
0.1
0.1
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
80
ID = 11 A
60
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40
20
0
25 50
75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
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