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PDF PFF2N60 Fiche technique ( Data sheet )

Numéro de référence PFF2N60
Description N-Channel MOSFET
Fabricant Pyramis Corporation 
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PFF2N60 Datasheet, Description
Pyramis Corporation
PFB2N60/PFF2N60
“The Silicon System Solutions Company”
Applications:
•Adaptor
•Charger
•SMPS Standby Power
•LCD Panel Power
Features:
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
N-Channel MOSFET
VDSS
600V
PRELIwMwIwN.DAatRaYSheet4U.com
RDS(ON) typical
3.7
ID
2.1 A
Ordering Information
PART NUMBER
PFB2N60
PFF2N60
PACKAGE
TO-220
TO-220F
BRAND
PFB2N60
PFF2N60
Absolute Maximum Ratings Tc=25 oC unless otherwise specified
Symbol
Parameter
GDS
TO-220
Not to Scale
PFB2N60
GDS
TO-220F
Not to Scale
PFF2N60
Units
VDSS
ID
ID@ 100 oC
IDM
PD
VGS
EAS
IAS
dv/dt
TL
TPKG
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=38mH, ID=2.1 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
Maximum Soldering Lead Temperature
Max Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
(NOTE *1)
(NOTE *2)
(NOTE *3)
600
2.1 2.1*
Fig.ure 3
Figure 6
54 23
0.43 0.18
±30
84
Figure 8
3.0
300
260
-55 to 150
V
A
W
W/ oC
V
mJ
V/ ns
oC
* Drain current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the semiconductor device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case.
Junction-to-Ambient
PFB2N60 PFF2N60
2.3 5.5
62.5 62.5
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150 oC
1 cubic foot chamber, free air.
©2004 Pyramis Corp.
PFB2N60/PFF2N60 REV. C. May 2004
PFF2N60 Fiche technique
PRELIMINARY
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
IS
Continuous Source Current (Body Diode)
--
--
2.1
ISM
Maximum Pulsed Current (Body Diode) -- --
8.4
VSD Diode Forward Voltage
-- --
1.5
trr Reverse Recovery Time
-- 172
258
Qrr Reverse Recovery Charge
-- 0.75
1.13
www.DataSheet4U.com
Units
Test Conditions
A Integral pn-diode
A in MOSFET
V IS=2.1A, VGS=0V
ns VGS=0V
µC IF=2.1A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +150 oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 2.1A di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 380µs; duty cycle < 2%.
©2004 Pyramis Corp.
PFB2N60/PFF2N60 REV. C, May 2004
Page 3 of 7

3 Page

PFF2N60 pdf
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
1.15
1.10
1.05
1.00
0.95
VGS = 0V
ID = 250 µA
0.90
-75 -50 -25 0.0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
Figure 13. Maximum Forward Bias Safe
Operating Area
10.0
TJ = MAX RATED,
TC = 25 oC
10µs
100µs
1.0
0.1
1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
DC
10 100
VDS, Drain-to-Source Voltage (V)
1000
Figure 15. Typical Gate Charge
vs Gate-to-Source Voltage
12
10
8 VDS=150V
VDS=300V
6 VDS=450V
4
2
ID = 2.1A
0
0 2 4 6 8 10 12 14 16
QG,Total Gate Charge (nC)
©2004 Pyramis Corp.
PRELIMINARY
Figure 12. Typical Threshold Voltage vs
Junction Tewmwpwer.DatautareSheet4U.com
1.2
1.1
1.0
0.9
0.8
VGS = VDS
ID = 250 µA
0.7
-75 -50 -25 0.0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
Figure 14. Typical Capacitance
vs Drain-to-Source Voltage
1000
Ciss
100
Coss
10
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd
Coss Cds + Cgd
Crss = Cgd
1
01
10
Crss
100
VDS, Drain Voltage (V)
1000
Figure 16. Typical Body Diode Transfer
Characteristics
40
35
30
25
20
15 150 oC
25 oC
10 -55 oC
5
0
0.4
VGS = 0V
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
PFB2N60/PFF2N60 REV. C, May 2004
Page 6 of 7

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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