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PDF 08P06P Fiche technique ( Data sheet )

Numéro de référence 08P06P
Description SPD08P06P
Fabricant Infineon Technologies 
Logo Infineon Technologies Logo 



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08P06P Datasheet, Description
Preliminary data
SPD08P06P
SPU08P06P
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
www.DataSheet·4UA.cvomalanche rated
· dv/dt rated
Drain source voltage
VDS -60 V
Drain-source on-state resistance RDS(on) 0.3 W
Continuous drain current
ID -8.8 A
· 175°C operating temperature
Type
SPD08P06P
SPU08P06P
Package Ordering Code
P-TO252 Q67040-S4153
P-TO251-3-1 Q67040-S4154
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
ID puls
Avalanche energy, single pulse
ID = -8.8 A , VDD = -25 V, RGS = 25 W
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = -8.8 A, VDS = -48 , di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Pin 1 PIN 2/4 PIN 3
GDS
Value
-8.8
-6.2
-35.2
70
4.2
6
Unit
A
mJ
kV/µs
±20
42
-55...+175
55/175/56
V
W
°C
Page 1
1999-11-22
08P06P Fiche technique
Preliminary data
SPD08P06P
SPU08P06P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Unit
Dynamic Characteristics
Transconductance
www.DataSheet4U.com
VDS³2*ID*RDS(on)max , ID = -6.2 A
Input capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
Rise time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
Turn-off delay time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
Fall time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
gfs
Ciss
Coss
Crss
td(on)
1.5 3.6
-S
- 335 420 pF
- 105 135
- 65 95
- 16 24 ns
tr - 46 69
td(off)
- 48 72
tf - 14 21
Page 3
1999-11-22

3 Page

08P06P pdf
Preliminary data
SPD08P06P
SPU08P06P
Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPD08P06P
-21 Ptot = 42.00W
A
-18
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j
-16
i
-14
-12
-10
-8
-6
-4
-2
0
0 -2 -4 -6
VGS [V]
a
b
hc
d
ge
f
fg
h
ei
j
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-10.0
d
c
b
a
-8 V -11
VDS
Typ. drain-source-on-resistance
RDS(on) = f (ID)
parameter: VGS
SPD08P06P
1.0
W abc d e f
gh
0.8
0.7
0.6
0.5
0.4
0.3
0.2
VGS [V] =
0.1 a b c d e f
ghi
j
-4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -10.0
ij
0.0
0
-2
-4
-6
-8 -10 -12 -14 A
-18
ID
Typ. transfer characteristics ID= f ( VGS )
VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
-30
A
Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
6
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
00 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
S
4
3
2
1
00 -2 -4 -6 -8 -10 -12 -14 -16 A -20
ID
Page 6
1999-11-22

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