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PDF Si2301BD Fiche technique ( Data sheet )

Numéro de référence Si2301BD
Description P-Channel 2.5-V (G-S) MOSFET
Fabricant Vishay Siliconix 
Logo Vishay Siliconix Logo 



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Si2301BD Datasheet, Description
P-Channel 2.5-V (G-S) MOSFET
Si2301BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.100 @ VGS = - 4.5 V
- 20 0.150 @ VGS = - 2.5 V
ID (A)b
- 2.4
- 2.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2301 BDS (L1)*
*Marking Code
Ordering Information: Si2301BDS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 2.4
- 1.9
- 0.72
0.9
0.57
- 20
"8
- 10
- 55 to 150
- 2.2
- 1.8
- 0.6
0.7
0.45
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
RthJA
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72066
S-31990—Rev. B, 13-Oct-03
Typical
120
140
Maximum
145
175
Unit
_C/W
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Si2301BD Fiche technique
Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10 Output Characteristics
10
8 VGS = 5 thru 2.5 V
8
2V
66
Transfer Characteristics
TC = - 55_C
25_C
125_C
4
2
0
0
0.5
1.5 V
1V
1234
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
4
2
0
0.0
800
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Capacitance
3.0
0.4
0.3
0.2
VGS = 2.5 V
0.1
0.0
0
VGS = 4.5 V
2468
ID - Drain Current (A)
10
Gate Charge
5
VDS = 10 V
ID = 2.8 A
4
600
400 Ciss
200
Coss
Crss
0
0
4 8 12 16
VDS - Drain-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 2.8 A
1.4
3 1.2
2 1.0
1 0.8
0
01234
Qg - Total Gate Charge (nC)
Document Number: 72066
S-31990—Rev. B, 13-Oct-03
5
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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