DataSheet.fr


K1010MA650 Datasheet PDF - IXYS

Numéro de référence K1010MA650
Description Medium Voltage Thyristor
Fabricant IXYS 
Logo IXYS Logo 
avant-première
10 Pages
		
K1010MA650 Datasheet

1 Page

K1010MA650 Fiche technique
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Medium Voltage Thyristor Types K1010MA600 and K1010MA650
Voltage Grade
60
65
VDRM VDSM VRRM
V
6000
6500
VRSM
V
6100
6600
VD VR
DC V
3320
3600
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
IAV = − V0 +
V0 + 4 ff rs WAV
2 ff rs
and:
WAV
=
T
Rth
T = T j max THs
Where V0=1.61V, rT=0.90mΩ,
Rth = Supplementary thermal impedance, see table below.
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Anode Side Cooled
Square wave Cathode Side Cooled
Sine wave Double Side Cooled
Sine wave Anode Side Cooled
Sine wave Cathode Side Cooled
30°
0.0216
0.0333
0.0413
0.0194
0.0313
0.0388
60°
0.0195
0.0313
0.0390
0.0173
0.0293
0.0367
90°
0.0182
0.0301
0.0377
0.0164
0.0285
0.0358
120°
0.0174
0.0293
0.0369
0.0158
0.0279
0.0353
180°
0.0164
0.0284
0.0359
0.0151
0.0271
0.0351
270°
0.0155
0.0275
0.0351
d.c.
0.0150
0.0270
0.0350
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60° 90°
2.45 2
2.78 2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types K1010MA600 and K1010MA650 Issue P1.
Page 3 of 10
May, 2015

3 Page

K1010MA650 pdf
Figure 5 – Recovered Charge, Qrr
100000
K1010MA600-650
Issue P1
Tj=125°C
10000
2000A
1500A
1000A
500A
Medium Voltage Thyristor Types K1010MA600 and K1010MA650
Figure 6 – Recovered charge, Qra (50% chord)
10000
K1010MA600-650
Issue P1
Tj=125°C
2000A
1500A
1000A
500A
1000
1
10 100
di/dt (A/µs)
1000
1000
1
10 100
di/dt (A/µs)
1000
Figure 7 – Reverse recovery current, Irm
1000
K1010MA600-650
Issue P1
Tj=125°C
2000A
1500A
1000A
500A
Figure 8 – Reverse recovery time, trr
100
K1010MA600-650
Issue P1
Tj=125°C
100
10
1
10 100
di/dt (A/µs)
1000
10
1
2000A
1500A
1000A
500A
10 100
di/dt (A/µs)
1000
Data Sheet. Types K1010MA600 and K1010MA650 Issue P1.
Page 6 of 10
May, 2015

6페이지





Constitution10 Pages
Télécharger[ K1010MA650.PDF ]

Liens de partage


Fiche technique recommandé

RéférenceDescriptionFabricant
K1010MA650Medium Voltage ThyristorIXYS
IXYS

RéférenceDescriptionFabricant
AAT3221The AAT3221 and AAT3222 NanoPower™ Low Drop Out (LDO) linear regulators are ideal for portable applications where extended battery life is critical.Skyworks
Skyworks
GFB60N03N-Channel Enhancement-Mode MOSFET, Advanced Trench Process Technology, High Density Cell Design for Ultra Low On-ResistanceGeneral Semiconductor
General Semiconductor
H6060The H6060 is a monolithic low-power CMOS device combining a programmable timer and a series of voltage comparators on the same chip.EM Microelectronic - MARIN SA
EM Microelectronic - MARIN SA
IT8772EThe IT8772E is a highly integrated Super I/O using the Low Pin Count Interface. It provides the most commonly used legacy Super I/O functionality plus the latest Environment Control initiatives, including H/W Monitor and Fan Speed Controller.ITE
ITE

Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z


www.DataSheet.fr    |   2018   |  Contactez-nous    |   Recherche