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PDF R0472YS16E Fiche technique - IXYS

Numéro de référence R0472YS16E
Description Distributed Gate Thyristor
Fabricant IXYS 
Logo IXYS Logo 



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R0472YS16E Datasheet, Description
WESTCODE
An IXYS Company
Date:- 30 Jun, 2008
Data Sheet Issue:- 1
Distributed Gate Thyristor
Types R0472YS12# to R0472YS16#
(Old Type Number: R210SH16H1R)
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200 -1600
1200 -1600
1200 -1600
1300 - 1700
UNITS
V
V
V
V
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
472
316
185
945
789
4300
4700
92.5×103
110.5×103
500
1000
5
2
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
Page 1 of 12
June, 2008
R0472YS16E Fiche technique
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
1200
1400
1600
VDRM VDSM VRRM
V
1200
1400
1600
VRSM
V
1300
1500
1700
VD VR
DC V
810
930
1020
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
Page 3 of 12
June, 2008

3 Page

R0472YS16E pdf
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ln(IT )+ C IT + D IT
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
A -0.04923298
B 0.9418825
C 2.513442 e-3
D -0.1889025
125°C Coefficients
A 5.22761
B -1.056685
C -5.150569 e- 4
D 0.1703342
16.2 D.C. Thermal Impedance Calculation
rt
=
p=n
rp
p =1
1
t
eτ p


Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp = Time Constant of rth term.
Term
rp
τp
1
0.0200056
0.3391689
D.C. Double Side Cooled
2
9.923438×10-3
3
0.01433715
0.1269073
0.03562131
4
4.284403×10-3
2.562946×10-3
Term
rp
τp
1
0.06157697
2.136132
D.C. Single Side Cooled
2
8.431182×10-3
3
0.01031315
1.212898
0.1512408
4
0.01613806
0.04244
5
5.181088×10-3
2.889595×10-3
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
Page 6 of 12
June, 2008

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