WESTCODE

An IXYS Company

Date:- 30 Jun, 2008

Data Sheet Issue:- 1

Distributed Gate Thyristor

Types R0472YS12# to R0472YS16#

(Old Type Number: R210SH16H1R)

Absolute Maximum Ratings

VDRM

VDSM

VRRM

VRSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

MAXIMUM

LIMITS

1200 -1600

1200 -1600

1200 -1600

1300 - 1700

UNITS

V

V

V

V

IT(AV)M

IT(AV)M

IT(AV)M

IT(RMS)

IT(d.c.)

ITSM

ITSM2

I2t

I2t

(di/dt)cr

VRGM

PG(AV)

PGM

Tj op

Tstg

OTHER RATINGS

Maximum average on-state current, Tsink=55°C, (note 2)

Maximum average on-state current. Tsink=85°C, (note 2)

Maximum average on-state current. Tsink=85°C, (note 3)

Nominal RMS on-state current, Tsink=25°C, (note 2)

D.C. on-state current, Tsink=25°C, (note 4)

Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)

Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)

I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6)

Critical rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Operating temperature range

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C Tj initial.

6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.

MAXIMUM

LIMITS

472

316

185

945

789

4300

4700

92.5×103

110.5×103

500

1000

5

2

30

-40 to +125

-40 to +150

UNITS

A

A

A

A

A

A

A

A2s

A2s

A/µs

A/µs

V

W

W

°C

°C

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 1 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

1200

1400

1600

VDRM VDSM VRRM

V

1200

1400

1600

VRSM

V

1300

1500

1700

VD VR

DC V

810

930

1020

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

8.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

IGM

4A/µs

IG

tp1

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration

(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The

‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a

magnitude in the order of 1.5 times IGT.

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 3 of 12

June, 2008

3 Page

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

16.0 Computer Modelling Parameters

16.1 Calculating VT using ABCD Coefficients

The on-state characteristic IT vs VT, on page 7 is represented in two ways;

(i) the well established VT0 and rT tangent used for rating purposes and

(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in

terms of IT given below:

VT = A + B ⋅ ln(IT )+ C ⋅ IT + D ⋅ IT

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics

where possible. The resulting values for VT agree with the true device characteristic over a current range,

which is limited to that plotted.

25°C Coefficients

A -0.04923298

B 0.9418825

C 2.513442 e-3

D -0.1889025

125°C Coefficients

A 5.22761

B -1.056685

C -5.150569 e- 4

D 0.1703342

16.2 D.C. Thermal Impedance Calculation

∑rt

=

p=n

rp

p =1

⋅

1

−

−t

eτ p

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

rt = Thermal resistance at time t.

rp = Amplitude of pth term.

τp = Time Constant of rth term.

Term

rp

τp

1

0.0200056

0.3391689

D.C. Double Side Cooled

2

9.923438×10-3

3

0.01433715

0.1269073

0.03562131

4

4.284403×10-3

2.562946×10-3

Term

rp

τp

1

0.06157697

2.136132

D.C. Single Side Cooled

2

8.431182×10-3

3

0.01031315

1.212898

0.1512408

4

0.01613806

0.04244

5

5.181088×10-3

2.889595×10-3

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 6 of 12

June, 2008

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