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PDF 2N7002V Fiche technique - JCET

Numéro de référence 2N7002V
Description MOSFET
Fabricant JCET 
Logo JCET Logo 

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2N7002V Datasheet, Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate MOSFETS
2N7002V MOSFET (N-Channel)
V(BR)DSS
60 V
RDS(on)MAX
  5Ω@10V 
7Ω@5V  
ID
115mA
SOT-563
6
5
4
1
2
3
FEATURE
Dual N-channel MOSFET
Low on-resistance
Low gate threshold voltage
Low input capacitance
Fast switching speed
Low input/output leakage
MARKING
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VDS
VGS
ID
PD
TJ
Tstg
Parameter
Drain-Source voltage
Gate-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
60
±20
115
150
150
-55-150
Unit
V
V
mA
mW
www.cj-elec.com
1
G,Sep,2016
2N7002V Fiche technique
Typical Characteristics
Output Characteristics
1.4
Ta=25VGS=10V,9V,8V,7V,6V
Pulsed
1.2
VGS=5V
1.0
0.8
VGS=4V
0.6
0.4
0.2 VGS=3V
0.0
012345
DRAIN TO SOURCE VOLTAGE VDS (V)
RDS(ON) —— ID
3
Ta=25
Pulsed
2
VGS=5V
1
VGS=10V
Transfer Characteristics
1.0
Ta=25
Pulsed
0.8
0.6
0.4
0.2
0.0
0246
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON) —— VGS
6
Ta=25
Pulsed
4
ID=500mA
2
ID=50mA
0
0.0 0.2 0.4 0.6 0.8 1.0
DRAIN CURRENT ID (A)
IS —— VSD
2
Ta=25
1 Pulsed
0.3
0.1
0.03
0.01
3E-3
1E-3
0.2
0.4 0.6 0.8 1.0 1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
1.4
ZZZFMHOHFFRP
3
0
0
6 12
GATE TO SOURCE VOLTAGE VGS (V)
18
G,Sep,2016

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


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