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PDF 2N7002DW Fiche technique - JCET

Numéro de référence 2N7002DW
Description Dual N-channel MOSFET
Fabricant JCET 
Logo JCET Logo 

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2N7002DW Datasheet, Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETs
2N7002DW
V(BR)DSS
60 V
Dual N-channel MOSFET
RDS(on)MAX
 5Ω@10V 
7Ω@5V  
FEATURE
z High density cell design for low RDS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
ID
115mA
SOT-363
6
5
4
1
2
3
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
Equivalent Circuit
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
Value
VDS
Drain-Source voltage
60
VGS
ID
Gate-Source voltage
Drain Current
±20
115
PD Power Dissipation
150
RӨJA Thermal Resistance from Junction to Ambient 833
TJ Junction Temperature
150
Tstg
Storage Temperature
-55-150
Unit
V
V
mA
mW
/W
www.cj-elec.com
1
I,Sep,2016
2N7002DW Fiche technique
Typical Characteristics
1.0
0.9 Ta=25
Pulsed
0.8
Output Characteristics
VGS=4V,5V,6V
0.7
0.6 VGS=3V
0.5
0.4
VGS=2.5V
0.3
0.2
0.1 VGS=2V
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DRAIN TO SOURCE VOLTAGE VDS (V)
1.0
0.9
VDS=3V
Pulsed
0.8
Transfer Characteristics
0.7
Ta=25
Ta=100
0.6
0.5
0.4
0.3
0.2
0.1
0.0
01234567
GATE TO SOURCE VOLTAGE VGS (V)
8
2.0
Ta=25
Pulsed
1.8
1.6
RDS(ON) —— ID
VGS=5V
1.4
1.2
VGS=10V
1.0
0.8
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
DRAIN CURRENT ID (A)
RDS(ON) —— VGS
7
Pulsed
6
ID=500mA
5
4
3
Ta=100
2
1
Ta=25
0
0 1 2 3 4 5 6 7 8 9 10
GATE TO SOURCE VOLTAGE VGS (V)
1
Pulsed
IS —— VSD
2.0
1.8
0.1
Ta=100
Ta=25
1.6
1.4
1.2
0.01
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
SOURCE TO DRAIN VOLTAGE VSD (V)
1.6
www.cj-elec.com
1.0
25
3
Threshold Voltage
ID=250uA
50 75 100
JUNCTION TEMPERATURE Tj ()
125
I,Sep,2016

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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