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PDF GFB60N03 Fiche technique - General Semiconductor

Numéro de référence GFB60N03
Description N-Channel Enhancement-Mode MOSFET
Fabricant General Semiconductor 
Logo General Semiconductor Logo 

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GFB60N03 Datasheet, Description
GFB60N03
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
TO-263AB
VDS 30V RDS(ON) 11mID 60A
New Product
G
D
0.380 (9.65)
0.420 (10.67)
0.21 (5.33)
Min.
D
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
S
0.42
(10.66)
0.320 (8.13)
0.360 (9.14)
PIN
GDS
Seating Plate
-T-
0.096 (2.43)
0.102 (2.59)
0.027 (0.686)
0.037 (0.940)
0.575 (14.60)
0.625 (15.88)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
Dimensions in inches
and (millimeters)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
0.63
(17.02)
0.33
(8.38)
Mounting Pad
Layout
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 1.3g
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
VDS
30
VGS ±20
ID 60
Pulsed Drain Current
IDM 100
Maximum Power Dissipation
TC = 25°C
TC = 100°C
PD
62.5
25
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Lead Temperature (1/8” from case for 5 sec.)
TL 275
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
2.0
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C
°C/W
°C/W
5/1/01
GFB60N03 Fiche technique
GFB60N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
80
VGS=10V
5.0V
4.5V
6.0V
60 4.0V
Fig. 2 – Transfer Characteristics
60
VDS = 10V
50
40
40
3.5V
20
3.0V
2.5V
0
012345
VDS -- Drain-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
1.4
ID = 250µA
1.2
1
0.8
0.6
0.4
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance
vs. Junction Temperature
1.6
VGS = 10V
ID = 30A
1.4
30
20
10
0
1
0.03
0.025
0.02
0.015
0.01
0.005
0
0
TJ = 125°C
25°C
--55°C
2 34
VGS -- Gate-to-Source Voltage (V)
Fig. 4 – On-Resistance
vs. Drain Current
5
VGS = 4.5V
5V
10V
20 40 60
ID -- Drain Current (A)
80
100
1.2
1
0.8
0.6
--50 --25 0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)

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