DataSheet.fr

PDF SI2301 Fiche technique ( Data sheet )

Numéro de référence SI2301
Description P-Channel 20-V(D-S) MOSFET
Fabricant YANGJING 
Logo YANGJING Logo 



3 Pages
		

No Preview Available !

SI2301 Datasheet, Description
SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2301 P-Channel 20-V(D-S) MOSFET
FEATURE
TrenchFET Power MOSFET
APPLICATIONS
z Load Switch for Portable Devices
z DC/DC Converter
MARKING: A11 SHB
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t 5s)
Junction Temperature
Storage Temperature
VDS
VGS
ID
IDM
IS
PD
R θJA
TJ
Tstg
Value
-20
±8
-2.3
-10
-0.72
0.35
357
150
-55 ~+150
Unit
V
A
W
/W
YANGJING
MICROELECTRONICS
www.szyangjing.com
4007-888-606 2
SI2301 Fiche technique
Typical Characteristics
SI2301
-14
T =25
a
Pulsed
-12
Output Characteristics
V = -4.0V,-3.5V,-3.0V,-2.5V
GS
V =-2.0V
GS
-10
-8
-6
V =-1.5V
GS
-4
-2
V =-1.0V
GS
-0
-0 -1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE V (V)
DS
-10
T =25
a
Pulsed
-8
Transfer Characteristics
-6
-4
-2
-0
-0.0
-0.5 -1.0 -1.5 -2.0
GATE TO SOURCE VOLTAGE V (V)
GS
-2.5
R —— I
DS(ON)
D
R —— V
DS(ON)
GS
150 250
T =25
a
T =25
a
Pulsed
Pulsed
120 200
V =-2.5V
90 GS
150
60 V =-4.5V
GS
30
100
I =-3.6A
D
50
0
-0 -2 -4 -6 -8 -10
DRAIN CURRENT I (A)
D
0
-0 -2 -4 -6 -8
GATE TO SOURCE VOLTAGE V (V)
GS
-1
T =25
a
Pulsed
-0.3
-0.1
I —— V
S SD
-0.03
-0.01
-3E-3
-1E-3
-0.2
-0.4 -0.6 -0.8 -1.0
SOURCE TO DRAIN VOLTAGE V (V)
SD
-1.2
YANGJING
MICROELECTRONICS
www.szyangjing.com
4007-888-606 2

3 Page




Constitution3 Pages
Télécharger[ SI2301.PDF ]

Liens de partage


Fiche technique recommandé

RéférenceDescriptionFabricant
SI2300DSN-Channel 30-V (D-S) MOSFETVishay Siliconix
Vishay Siliconix
SI2301P-Channel Enhancement Mode MOSFETJinYu
JinYu
SI2301P-Channel 20-V(D-S) MOSFETYANGJING
YANGJING
SI2301P-Channel Enhancement Mode Field Effect TransistorMCC
MCC
SI2301P-CHANNEL MOSFETBLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
SI2301ADSP-Channel 2.5-V (G-S) MOSFETVishay
Vishay
Si2301BDP-Channel 2.5-V (G-S) MOSFETVishay Siliconix
Vishay Siliconix
SI2301BDSP-Channel 2.5-V (G-S) MOSFETVishay Siliconix
Vishay Siliconix
SI2301CDSP-Channel 20 V (D-S) MOSFETVishay
Vishay

RéférenceDescriptionFabricant
H6060Monolithic low-power CMOS device combining a programmable timerEM Microelectronic - MARIN SA
EM Microelectronic - MARIN SA
IT8772EHighly integrated Super I/O using the Low Pin Count InterfaceITE
ITE

Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


www.DataSheet.fr    |   2020   |  Contactez-nous    |   Recherche