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PDF C5906 Fiche technique - PHENITEC SEMICONDUCTOR

Numéro de référence C5906
Description Silicon NPN transistor
Fabricant PHENITEC SEMICONDUCTOR 
Logo PHENITEC SEMICONDUCTOR Logo 

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C5906 Datasheet, Description
Silicon NPN transistor epitaxial type
C5906
C5906
[ Applications ]
High voltage, High current
[ Feature ]
High voltage VCEO= 170V
High current gain charactristic
Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA
Fast-switching speed
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings
Collector-base voltage
VCBO
200
Collector-emitter voltage
VCEO
170
Emitter-base voltage
VEBO
6
Collector current
IC 5
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Unit
V
V
V
A
C
C
[ Electrical characteristics (Ta=25C) ]
Characteristic
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 200
-
- V IC= 1mA
Collector-emitter breakdown voltage BVCEO 170
-
- V IC= 20mA
Emitter-base breakdown voltage
BVEBO 6
-
- V IE= 1mA
Collector cut-off current
ICBO
-
- 10 uA VCB= 100V
DC current gain 1
hFE 1 40
-
-
- VCE= 5V, IC= 500mA
DC current gain 2
hFE 2 40
-
-
- VCE= 5V, IC= 2A
DC current gain 3
hFE 3 15
-
-
- VCE= 5V, IC= 5A
Collector-emitter saturation voltage 1 VCE(sat) 1 -
- 0.45 V IC= 2A, IB= 200mA
Collector-emitter saturation voltage 2 VCE(sat) 2 - - 1 V IC= 5A, IB= 500mA
Base-emitter saturation voltage 1 VBE(sat) 1 -
- 1.1 V IC= 2A, IB= 200mA
Base-emitter saturation voltage 2 VBE(sat) 2 -
- 1.5 V IC= 5A, IB= 500mA
Transition frequency
fT - 90 - MHz VCE= 10V, IE= -100mA
Collector output capacitance
Cob -
- 80 pF VCB= 50V, f = 1MHz, IE= 0A
Turn on time
ton - - 1 us VCC= 40V, IC= 5A
Turn off time
toff - - 2 us IB1= -IB2= 500mA
Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.
No. C5906-20070313
PHENITEC SEMICONDUCTOR Corp.
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