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PDF C5906 Fiche technique - Toshiba

Numéro de référence C5906
Description Silicon NPN Epitaxial Type Transistor
Fabricant Toshiba 
Logo Toshiba Logo 

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C5906 Datasheet, Description
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SC5906
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max)
High-speed switching: tf = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC (Note 1)
Tj
Tstg
50
50
30
7
4
7
0.4
0.8
1.25
150
55 to 150
V
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2002-11
1 2013-11-01
C5906 Fiche technique
8 Common emitter
Ta = 25°C
IC – VCE
6
20
16
12
10
4
8
6
2
4
IB = 2mA
0
0123456
Collector-emitter voltage VCE (V)
3
Common emitter
1 IC/IB = 30
VCE (sat) IC
0.3
0.1
0.03
0.01
Ta = −55°C
0.003
25 100
0.001
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
2SC5906
30000
10000
hFE IC
3000
1000
300
Ta = −55°C
100
25
100
30 Common emitter
VCE = 2 V
10
0.001 0.003 0.01 0.03 0.1 0.3 1
3
10
Collector current IC (A)
30
Common emitter
10 IC/IB = 30
VBE (sat) IC
3
1 Ta = −55°C
0.3
25
0.1 100
0.03
0.01
0.001 0.003 0.01 0.03 0.1 0.3
1
3 10
Collector current IC (A)
7
Common emitter
VCE = 2 V
6
IC – VBE
5
4
3
Ta = 100°C
25
2
55
1
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
1.6
3
2013-11-01

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