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2SC5906 Datasheet PDF - Toshiba

Silicon NPN Epitaxial Type Transistor

Numéro de référence 2SC5906
Description Silicon NPN Epitaxial Type Transistor
Fabricant Toshiba 
Logo Toshiba Logo 
avant-première
5 Pages
		
2SC5906 Datasheet

1 Page

2SC5906 Fiche technique
8 Common emitter
Ta = 25°C
IC – VCE
6
20
16
12
10
4
8
6
2
4
IB = 2mA
0
0123456
Collector-emitter voltage VCE (V)
3
Common emitter
1 IC/IB = 30
VCE (sat) IC
0.3
0.1
0.03
0.01
Ta = −55°C
0.003
25 100
0.001
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
2SC5906
30000
10000
hFE IC
3000
1000
300
Ta = −55°C
100
25
100
30 Common emitter
VCE = 2 V
10
0.001 0.003 0.01 0.03 0.1 0.3 1
3
10
Collector current IC (A)
30
Common emitter
10 IC/IB = 30
VBE (sat) IC
3
1 Ta = −55°C
0.3
25
0.1 100
0.03
0.01
0.001 0.003 0.01 0.03 0.1 0.3
1
3 10
Collector current IC (A)
7
Common emitter
VCE = 2 V
6
IC – VBE
5
4
3
Ta = 100°C
25
2
55
1
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
1.6
3
2013-11-01

3 Page






Constitution5 Pages
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


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