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PDF K3618 Fiche technique - Sanyo

Numéro de référence K3618
Description 2SK3618
Fabricant Sanyo 
Logo Sanyo Logo 

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K3618 Datasheet, Description
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Ordering number : ENN8325
2SK3618
2SK3618
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : K3618
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=10V
ID=4A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
100
±20
8
32
1
20
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
100
1.2
4
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
7S
100 130 m
130 180 m
880 pF
80 pF
55 pF
11.5 ns
14 ns
100 ns
42 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PA MS IM TB-00001380 No.8325-1/4
K3618 Fiche technique
2SK3618
RDS(on) -- VGS
180
Tc=25°C
ID=4A
160
300
250
200
140
150
120
100
100
50
RDS(on) -- Tc
I DI=D4=A4,AV,GVSG=4SV=10V
80
2345678
Gate-to-Source Voltage, VGS -- V
yfs-- ID
5
VDS=10V
3
9 10
IT07980
2
25°C
10
7
5
Tc=
--25°C
75°C
3
2
1.0
23
3
2
100
7
5
5 7 1.0
23
5 7 10
Drain Current, ID -- A
SW Time -- ID
23
IT07026
td(off)
VDD=50V
VGS=10V
tf
3
2
tr td(on)
10
7
5
3
0.1 2 3
10
VDS=50V
9 ID=8A
5 7 1.0 2 3 5 7 10
Drain Current, ID -- A
VGS -- Qg
8
23 5
IT07028
7
6
5
4
3
2
1
0
0 5 10 15 20 25
Total Gate Charge, Qg -- nC
IT07982
0
--50
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IT07981
IS -- VSD
VGS=0V
0.3 0.6 0.9 1.2 1.5
Diode Forward Voltage, VSD -- V IT07027
Ciss, Coss, Crss -- VDS
f=1MHz
1000
7
5
Ciss
3
2
100 Coss
7 Crss
5
3
2
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT07029
ASO
5
3
2
IDP=32A
10 ID=8A
<10µs
100µs 10µs
7
5
3
2
1.0
7
5
3
Operation
in
this
DC
area
operat1io0n0m1(T0smc=s25°1Cm) s
2 is limited by RDS(on).
0.1
7
5
3
2
Tc=25°C
Single pulse
0.01
0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
23
Drain-to-Source Voltage, VDS -- V
5 7100 2
IT07983
No.8325-3/4

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