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Numéro de référence 1N5343B
Description 40 Zener Voltage Regulators
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1N5343B Datasheet, Description
1N53 Series
5 Watt Surmetict
40 Zener Voltage Regulators
This is a complete series of 5 Watt Zener diodes with tight limits and
better operating characteristics that reflect the superior capabilities of
siliconoxide passivated junctions. All this in an axial lead,
transfermolded plastic package that offers protection in all common
environmental conditions.
Features
Zener Voltage Range 3.3 V to 200 V
ESD Rating of Class 3 (>16 kV) per Human Body Model
Surge Rating of up to 180 W @ 8.3 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
PbFree Packages are Available*
Mechanical Characteristics
CASE: Void free, transfermolded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16 in. from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Max. Steady State Power Dissipation
@ TL = 25°C, Lead Length = 3/8 in
Derate above 25°C
PD
5W
40 mW/°C
JunctiontoLead Thermal Resistance
qJL
25 °C/W
Operating and Storage
Temperature Range
TJ, Tstg 65 to +200
(Note 1)
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Max operating temperature for DC conditions is 150°C, but not to exceed
200°C for pulsed conditions with low duty cycle or nonrepetitive.
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Cathode
Anode
AXIAL LEAD
CASE 017AA
PLASTIC
MARKING DIAGRAM
A
1N
53xxB
YYWWG
G
A = Assembly Location
1N53xxB = Device Number
(Refer to Tables on Pages 3 & 4)
YY = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
1N53xxB, G
Axial Lead
(PbFree)
1000 Units/Box
1N53xxBRL, G Axial Lead 4000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
November, 2013 Rev. 15
1
Publication Order Number:
1N5333B/D
1N5343B Fiche technique
1N53 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Device
(Note 7)
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
1N5373B
1N5374B
1N5375B
1N5377B
1N5378B
1N5380B
1N5381B
1N5383B
1N5384B
1N5386B
1N5387B
1N5388B
Device
Marking
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
1N5373B
1N5374B
1N5375B
1N5377B
1N5378B
1N5380B
1N5381B
1N5383B
1N5384B
1N5386B
1N5387B
1N5388B
Zener Voltage (Note 8)
VZ (Volts)
@ IZT
Min Nom Max mA
10.45 11 11.55 125
11.4 12 12.6 100
12.35 13 13.65 100
13.3 14 14.7 100
14.25 15 15.75 75
15.2
16.15
17.1
18.05
19
16 16.8
17 17.85
18 18.9
19 19.95
20 21
75
70
65
65
65
20.9
22.8
23.75
25.65
26.6
22 23.1
24 25.2
25 26.25
27 28.35
28 29.4
50
50
50
50
50
28.5
31.35
34.2
37.05
40.85
30 31.5
33 34.65
36 37.8
39 40.95
43 45.15
40
40
30
30
30
44.65
48.45
53.2
57
58.9
47 49.35
51 53.55
56 58.8
60 63
62 65.1
25
25
20
20
20
64.6
71.25
77.9
86.45
68 71.4
75 78.75
82 86.1
91 95.55
20
20
15
15
95 100 105
114 120 126
123.5 130 136.5
12
10
10
142.5 150 157.5
152 160 168
171 180 189
180.5 190 199.5
190 200 210
8
8
5
5
5
Zener Impedance (Note 8)
ZZT @ IZT
W
2.5
2.5
2.5
2.5
2.5
ZZK @ IZK
W
125
125
100
75
75
IZK
mA
1
1
1
1
1
2.5 75 1
2.5 75 1
2.5 75 1
3 75 1
3 75 1
3.5 75 1
3.5 100 1
4 110 1
5 120 1
6 130 1
8 140 1
10 150 1
11 160 1
14 170 1
20 190 1
25 210 1
27 230 1
35 280 1
40 350 1
42 400 1
44 500 1
45 620 1
65 720 1
75 760 1
90 800 1
170
1150
1
190
1250
1
330
1500
1
350
1650
1
430
1750
1
450
1850
1
480
1850
1
Leakage
Current
IR @ VR
mA Max Volts
5 8.4
2 9.1
1 9.9
1 10.6
1 11.5
1 12.2
0.5 12.9
0.5 13.7
0.5 14.4
0.5 15.2
0.5 16.7
0.5 18.2
0.5 19
0.5 20.6
0.5 21.2
0.5 22.8
0.5 25.1
0.5 27.4
0.5 29.7
0.5 32.7
0.5 35.8
0.5 38.8
0.5 42.6
0.5 45.5
0.5 47.1
0.5 51.7
0.5 56
0.5 62.2
0.5 69.2
0.5 76
0.5 91.2
0.5 98.8
0.5 114
0.5 122
0.5 137
0.5 144
0.5 152
IR
(Note 9)
A
8.0
7.5
7.0
6.7
6.3
6.0
5.8
5.5
5.3
5.1
4.7
4.4
4.3
4.1
3.9
3.7
3.5
3.5
3.1
2.8
2.7
2.5
2.3
2.2
2.1
2.0
1.9
1.8
1.6
1.5
1.3
1.2
1.1
1.1
1.0
0.9
0.9
DVZ
(Note
10)
Volts
0.25
0.25
0.25
0.25
0.25
0.3
0.35
0.4
0.4
0.4
0.45
0.55
0.55
0.6
0.6
0.6
0.6
0.65
0.65
0.7
0.8
0.9
1.0
1.2
1.35
1.52
1.6
1.8
2.2
2.5
2.5
2.5
3.0
3.0
4.0
5.0
5.0
IZM
(Note 11)
mA
430
395
365
340
315
295
280
264
250
237
216
198
190
176
170
158
144
132
122
110
100
93
86
79
76
70
63
58
52.5
47.5
39.5
36.6
31.6
29.4
26.4
25
23.6
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
7. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.
8. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied
40 ±10 ms prior to reading. Mounting contacts are located 3/8to 1/2from the inside edge of mounting clips to the body of the diode
(TA = 25°C +8°C, 2°C).
9. SURGE CURRENT (IR): Surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width,
PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between
1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in
Figure 6. Mounting contact located as specified in Note 7 (TA = 25°C +8°C, 2°C).
10. VOLTAGE REGULATION (DVZ): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%
of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting
contact located as specified in Note 7 (TA = 25°C +8°C, 2°C).
11. MAXIMUM REGULATOR CURRENT (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
it applies only to the Bsuffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device.
TL = 25°C at 3/8maximum from the device body.
†The “G’’ suffix indicates PbFree package or PbFree packages are available.
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1N5343B pdf
1N53 Series
100
10
1
0.1
80 100 120 140 160 180 200 220
VZ, ZENER VOLTAGE (VOLTS)
Figure 9. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = qLA PD + TA
qLA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + DTJL
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
DTJL = qJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qVZ, the Zener voltage temperature coefficient, is found
from Figures 2 and 3.
Under high power-pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
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