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Numéro de référence ADuM3123
Description Isolated Precision Gate Driver
Fabricant Analog Devices 
Logo Analog Devices Logo 



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ADuM3123 Datasheet, Description
Data Sheet
FEATURES
4.0 A output short-circuit pulsed current
Isolated working voltage
Secondary side to input side: 537 V
High frequency operation: 1 MHz maximum
3.3 V to 5 V input logic
4.5 V to 18 V output drive
Undervoltage lockout (UVLO): 2.8 V VDD1
Precise timing characteristics
64 ns maximum isolator and driver propagation delay
Complementary metal oxide semiconductor (CMOS) input
logic levels
High common-mode transient immunity: >25 kV/μs
High junction temperature operation: 125°C
Default low output
Safety and regulatory approvals (pending)
UL recognition per UL 1577
3000 V rms for 1 minute SOIC long package
CSA Component Acceptance Notice 5A
VDE certificate of conformity (pending)
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
Maximum working insulation voltage (VIORM) = 560 V peak
Narrow body, 8-lead SOIC
APPLICATIONS
Switching power supplies
Isolated gate bipolar transistors (IGBT)/MOSFET gate drives
Industrial inverters
Isolated Precision Gate Driver,
4.0 A Output
ADuM3123
GENERAL DESCRIPTION
The ADuM31231 is a 4.0 A isolated, single channel driver that
employs Analog Devices, Inc., iCoupler® technology to provide
precision isolation. The ADuM3123 provides 3000 V rms
isolation in the narrow-body, 8-lead SOIC package. Combining
high speed CMOS and monolithic transformer technology,
these isolation components provide outstanding performance
characteristics superior to alternatives such as the combination
of pulse transformers and gate drivers.
The ADuM3123 operates with an input supply ranging from
3.0 V to 5.5 V, providing compatibility with lower voltage
systems. In comparison to gate drivers employing high voltage
level translation methodologies, the ADuM3123 offers the
benefit of true, galvanic isolation between the input and the
output. The output can continuously operate up to 380 V rms
relative to the input.
As a result, the ADuM3123 provides reliable control over the
switching characteristics of IGBT/MOSFET configurations over
a wide range of positive and negative switching voltages.
VDD1 1
VI 2
DISABLE 3
FUNCTIONAL BLOCK DIAGRAM
ADuM3123
ENCODE
DECODE
GND1 4
8 VDD2
7 VO
6 NIC
5 GND2
NIC = NOT INTERNALLY CONNECTED
Figure 1.
1 Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other patents pending.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
ADuM3123 Fiche technique
ADuM3123
TABLE OF CONTENTS
Features .............................................................................................. 1 
Applications....................................................................................... 1 
General Description ......................................................................... 1 
Functional Block Diagram .............................................................. 1 
Revision History ............................................................................... 2 
Specifications..................................................................................... 3 
Electrical Characteristics—5 V Operation................................ 3 
Electrical Characteristics—3.3 V Operation ............................ 5 
Package Characteristics ............................................................... 6 
Insulation and Safety Related Specifications ............................ 6 
Regulatory Information............................................................... 6 
DIN V VDE V 0884-10 (VDE V 0884-10) Insulation
Characteristics .............................................................................. 7 
Recommended Operating Conditions ...................................... 7 
Absolute Maximum Ratings............................................................ 8 
REVISION HISTORY
7/15—Revision 0: Initial Version
Data Sheet
ESD Caution...................................................................................8 
Pin Configuration and Function Descriptions..............................9 
Typical Performance Characteristics ........................................... 10 
Applications Information .............................................................. 12 
Printed Circuit Board (PCB) Layout ....................................... 12 
Propagation Delay Related Parameters ................................... 12 
Thermal Limitations and Switch Load Characteristics......... 12 
Output Load Characteristics..................................................... 12 
DC Correctness and Magnetic Field Immunity..................... 13 
Power Consumption .................................................................. 14 
Insulation Lifetime ..................................................................... 14 
Outline Dimensions ....................................................................... 15 
Ordering Guide .......................................................................... 15 
Rev. 0 | Page 2 of 15

3 Page

ADuM3123 pdf
Data Sheet
ADuM3123
ELECTRICAL CHARACTERISTICS—3.3 V OPERATION
All voltages are relative to their respective ground. 3.0 V ≤ VDD1 ≤ 3.6 V, and 4.5 V ≤ VDD2 ≤ 18 V, unless stated otherwise. All minimum/
maximum specifications apply over TJ = −40°C to +125°C. All typical specifications are at TJ = 25°C, VDD1 = 3.3 V, and VDD2 = 12 V.
Switching specifications are tested with CMOS signal levels.
Table 2.
Parameter
DC SPECIFICATIONS
Input Supply Current, Quiescent
Output Supply Current, Quiescent
Supply Current at 1 MHz
VDD1 Supply Current
VDD2 Supply Current
Input Currents
Input Threshold
Logic High
Logic Low
Output Voltages
Logic High
Logic Low
Undervoltage Lockout, VDD1 Supply
Positive Going Threshold
Negative Going Threshold
Hysteresis
Undervoltage Lockout, VDD2 Supply
Positive Going Threshold
Negative Going Threshold
Hysteresis
Output Short-Circuit Pulsed Current1
Output Source Resistance
Output Sink Resistance
THERMAL SHUTDOWN TEMPERATURES
Junction Temperature Shutdown
Rising Edge
Falling Edge
Symbol Min
Typ Max
Unit
IDDI(Q)
IDD2(Q)
0.87 1.4
2.3 3.7
mA
mA
IDD1
IDD2
II −10
1.1
5.6
+0.01
1.5
8.0
+10
mA
mA
µA
VIH 0.7 × VDD1
VIL
0.3 × VDD1
V
V
VOH VDD2 − 0.1 VDD2
VOL 0.0 0.15
V
V
VDD1UV+
VDD1UV−
VDD1UVH
VDD2UV+
VDD2UV−
VDD2UVH
3.2
5.7
9.0
IO(SC)
RON_P
RON_N
2.0
0.25
0.55
2.8
2.6
0.2
4.1 4.4
6.9 7.4
10.5 11.1
3.6
6.2
9.6
0.5
0.7
0.9
4.0
0.95 1.5
0.6 1.35
V
V
V
V
V
V
V
V
V
V
V
V
A
TJR 150 °C
TJF 140 °C
Test Conditions/Comments
Up to 1 MHz, no load
Up to 1 MHz, no load
0 V ≤ VI ≤ VDD1
VO = −20 mA, VI = VIH
VO = +20 mA, VI = VIL
A Grade
B Grade
C Grade
A Grade
B Grade
C Grade
A Grade
B Grade
C Grade
VDD2 = 12 V
VDD2 = 12 V, IVO = −250 mA
VDD2 = 12 V, IVO = 250 mA
Rev. 0 | Page 5 of 15

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