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PDF BCP56-10T1G Fiche technique ( Data sheet )

Numéro de référence BCP56-10T1G
Description NPN Silicon Epitaxial Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor Logo 



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BCP56-10T1G Datasheet, Description
BCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
High Current: 1.0 A
The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel
Use BCP56T3G to Order the 13 inch/4000 Unit Reel
PNP Complement is BCP53T1G
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
80 Vdc
100 Vdc
5 Vdc
1 Adc
1.5 W
12 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg − 65 to 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
RqJA
83.3
°C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
TL
260 °C
10 Sec
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
www.onsemi.com
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
123
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
XXXXXG
G
1
XXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 12
1
Publication Order Number:
BCP56T1/D
BCP56-10T1G Fiche technique
1000
VCE = 2 V
100
BCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 150°C
125°C
25°C
- 55°C
- 65°C
10
0.1
1 10
IC, COLLECTOR CURRENT (mA)
100
1000
Figure 1. DC Current Gain
1000
100
10
1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Current−Gain − Bandwidth Product
80
60
TJ = 25°C
40 Cibo
20
10
8.0
6.0
4.0
0.1
0.2
Cobo
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
50 100
1
IC/IB = 10
0.1
150°C
25°C
−55°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 IC/IB = 10
1.0
0.9
−55°C
0.8
0.7 25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
www.onsemi.com
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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