DataSheet.fr

PDF 6N60AF Fiche technique - nELL

Numéro de référence 6N60AF
Description N-Channel Power MOSFET
Fabricant nELL 
Logo nELL Logo 



10 Pages
		

No Preview Available !

6N60AF Datasheet, Description
SEMICONDUCTOR
6N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(6A, 600Volts)
DESCRIPTION
The Nell 6N60 is a three-terminal silicon
device with current conduction capability
of 6A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 1.5Ω@VGS = 10V
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance
(CRSS = 10pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-251 (I-PAK)
(6N60F)
D
D
G
S
TO-252 (D-PAK)
(6N60G)
GDS
TO-220AB
(6N60A)
GDS
TO-220F
(6N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
6
600
1.5 @ VGS = 10V
25
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 10
6N60AF Fiche technique
SEMICONDUCTOR
6N60 Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS
▲ ▲V(BR)DSS/ TJ
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
ID = 250µA, VGS = 0V
ID = 250µA, VDS = VGS
600
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID = 3A, VGS = 10V
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
2.0
CISS
Input capacitance
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V,
ID = 6A, RGS = 25Ω(Note 1, 2)
tf Fall time
QG
QGS
QGD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V, ID = 6A
(Note 1, 2)
Typ.
0.53
1.0
770
95
10
20
70
40
45
20
5
9.5
Max. UNIT
V
V/ºC
10
μA
100
100
-100
nA
1.5 Ω
4.0 V
1000
120
pF
13
50
150
ns
90
100
25
uC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 6A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
6
ISM Pulsed source current
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
G
(Gate)
S (Source)
ISD = 6A, VGS = 0V,
dIF/dt = 100A/µs
A
24
280 ns
2.3 µC
www.nellsemi.com
Page 3 of 10

3 Page

6N60AF pdf
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
Fig.1 On-state characteristices
101
100
VGS
Top: 15V
10V
8V
7V
6.5V
6V
5.5V
5V
Bottorm: 4.5V
15V
5V
10-1
10-2
10-1
Note:
1. 250µs Pulse Test
2. TC = 25°C
100 101
Drain-to-Source voltage, VDS (V)
Fig.3 On-Resistance variation vs drain
current and gate voltage
6
5
4
3 VGS = 10V
2 VGS = 20V
1 Note:
1. TC = 25°C
0
0 2 4 6 8 10 12 14
Gate threshold voltage, VGS (TH)
Fig.5 Capacitance characteristics
1000
800
600
400
200
Ciss = Cgs +Cgd (Cds = shorted )
Coss = Cds +Cgd Crss = Cgd
Ciss
Coss
Crss
Note:
1. VGS = 0V
2. f = 1MHz
0
10-1
100
101
Drain-Source voltage, VDS (V)
www.nellsemi.com
6N60 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
101
25°C
150°C
100
-55°C
10-1
2
Note:
1. VDS = 40V
2. 250µs Pulse Test
4 6 8 10
Gate-Source voltage, VGS (V)
Fig.4 Body diode forward voltage variation
vs. source current and temperature
100
150ºC
25ºC
101
Note:
1. VGS = 0V
2. 250µs Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Source-Drain voltage, VSD (V)
Fig.6 Gate charge characteristics
12
10
8
6
4
2
0
0
Page 6 of 10
VDS = 120V
VDS = 300V
VDS = 480V
Note:
1. lD = 6A
6 12 18
Total gate charge, QG (nC)
24

6페이지



Constitution10 Pages
Télécharger[ 6N60AF.PDF ]

Liens de partage


Fiche technique recommandé

RéférenceDescriptionFabricant
6N60AN-Channel Power MOSFETnELL
nELL
6N60AFN-Channel Power MOSFETnELL
nELL

RéférenceDescriptionFabricant
H6060Monolithic low-power CMOS device combining a programmable timerEM Microelectronic - MARIN SA
EM Microelectronic - MARIN SA
IT8772EHighly integrated Super I/O using the Low Pin Count InterfaceITE
ITE

Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


www.DataSheet.fr    |   2019   |  Contactez-nous    |   Recherche