DataSheet.fr

PDF EDI88512CA-XMXG Fiche technique - Microsemi

Numéro de référence EDI88512CA-XMXG
Description 512Kx8 Plastic Monolithic SRAM CMOS
Fabricant Microsemi 
Logo Microsemi Logo 

9 Pages
		

No Preview Available !

EDI88512CA-XMXG Datasheet, Description
EDI88512CA-XMXG
WPS512K8X-XRJXG
512Kx8 Plastic Monolithic SRAM CMOS
FEATURES
 512Kx8 bit CMOS Static
 Random Access Memory
• Access Times of 17, 20, 25ns
• Data Retention Function (LPA version)
• Extended Temperature Testing
• Data Retention Functionality Testing
 36 lead JEDEC Approved Revolutionary Pinout
• Plastic SOJ (Package 319)
 Single +5V (±10%) Supply Operation
 RoHS compliant
WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to
capitalize on the cost advantage of using a plastic component while
not sacricing all of the reliability available in a full military device.
Extended temperature testing is performed with the test patterns
developed for use on WEDC’s fully compliant 512Kx8 SRAMs.
WEDC fully characterizes devices to determine the proper test
patterns for testing at temperature extremes. This is critical because
the operating characteristics of device change when it is operated
beyond the commercial guarantee a device that operates reliably
in the eld at temperature extremes. Users of WEDC’s ruggedized
plastic benet from WEDC’s extensive experience in characterizing
SRAMs for use in military systems.
WEDC ensures Low Power devices will retain data in Data
Retention mode by characterizing the devices to determine the
appropriate test conditions. This is crucial for systems operating
at -40°C or below and using dense memories such as 512Kx8s.
WEDC’s ruggedized plastic SOJ is footprint compatible with
WEDC’s full military ceramic 36 pin SOJ.
FIGURE 1 – PIN CONFIGURATION
TOP VIEW
A0 1
A1 2
A2 3
A3 4
A4 5
CS# 6
I/O0 7
I/O1 8
VCC 9
VSS 10
I/O2 11
I/O3 12
WE# 13
A5 14
A6 15
A7 16
A8 17
A9 18
36pin
Revolutionary
36 NC
35 A18
34 A17
33 A16
32 A15
31 OE#
30 I/O7
29 I/O6
28 VSS
27 VCC
26 I/O5
25 I/O4
24 A14
23 A13
22 A12
21 A11
20 A10
19 NC
AØ-18
WE#
CS#
OE#
Microsemi Corporation reserves the right to change products or specications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
1
PIN Description
I/O0-7
A0-18
WE#
CS#
OE#
VCC
VSS
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power (+5V ±10%)
Ground
Not Connected
BLOCK DIAGRAM
Memory Array
Address
Buffer
Address
Decoder
I/O
Circuits
I/OØ-7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA-XMXG Fiche technique
EDI88512CA-XMXG
WPS512K8X-XRJXG
AC CHARACTERISTICS – READ CYCLE
VCC = 5.0V, VSS = 0V, 0°C TA +70°C
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Chip Enable to Output in Low Z (1)
Chip Disable to Output in High Z (1)
Output Hold from Address Change
Output Enable to Output Valid
Output Enable to Output in Low Z (1)
Output Disable to Output in High Z(1)
1. This parameter is guaranteed by design but not tested.
Symbol
JEDEC
Alt.
tAVAV
tRC
tAVQV
tAA
tELQV
tACS
tELQX
tCLZ
tEHQZ
tCHZ
tAVQX
tOH
tGLQV
tOE
tGLQX
tOLZ
tGHQZ
tOHZ
17ns
Min Max
17
17
17
3
07
0
8
0
07
20ns
Min Max
20
20
20
3
08
0
10
0
08
25ns
Min Max
25
25
25
3
0 10
0
12
0
0 10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC CHARACTERISTICS – WRITE CYCLE
VCC = 5.0V, VSS = 0V, 0°C TA +70°C
Parameter
Symbol
JEDEC
Alt.
Write Cycle Time
tAVAV
tWC
Chip Enable to End of Write
tELWH
tELEH
tCW
tCW
Address Setup Time
tAVWL
tAVEL
tAS
tAS
Address Valid to End of Write
tAVWH
tAVEH
tAW
tAW
Write Pulse Width
tWLWH
tWLEH
tWP
tWP
Write Recovery Time
tWHAX
tEHAX
tWR
tWR
Data Hold Time
tWHDX
tEHDX
tDH
tDH
Write to Output in High Z (1)
tWLQZ
tWHZ
Data to Write Time
tDVWH
tDVEH
tDW
tDW
Output Active from End of Write (1)
tWHQX
tWLZ
1. This parameter is guaranteed by design but not tested.
17ns
Min Max
17
14
14
0
0
14
14
14
14
0
0
0
0
08
8
8
0
20ns
Min Max
20
15
15
0
0
15
15
15
15
0
0
0
0
08
10
10
0
25ns
Min Max
25
17
17
0
0
17
17
17
17
0
0
0
0
0 10
12
12
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Microsemi Corporation reserves the right to change products or specications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

3 Page

EDI88512CA-XMXG pdf
EDI88512CA-XMXG
WPS512K8X-XRJXG
FIGURE 6 – NORMALIZED OPERATING GRAPHS
CC1 (20ns) vs emp
220
210
200
10
10
170
160
-55
25
emp. (C)
125
rite ulse idth vs. emp.
14
13
12
11
10
7
6
-55
25
emp. (C)
125
10
1
0.1
0.01
-55
CC3vs. emp
25
emp. (C)
125
A vs. emp
22
20
1
10
16
14
12
-55
25
emp. (C)
125
10
1
0.1
0.01
0.001
CC R vs. emp
-55 25 125
emp. (C)
R2
R3
ormali ed curves are o ered
as a service to our customers.
hey are not to e construed
as a guarantee o operating
characterics.
Characteristics o actual
devices will vary.
Microsemi Corporation reserves the right to change products or specications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 11
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

6페이지



Constitution9 Pages
Télécharger[ EDI88512CA-XMXG.PDF ]

Liens de partage


Fiche technique recommandé

RéférenceDescriptionFabricant
EDI88512CA-XMXG512Kx8 Plastic Monolithic SRAM CMOSMicrosemi
Microsemi

RéférenceDescriptionFabricant
H6060Monolithic low-power CMOS device combining a programmable timerEM Microelectronic - MARIN SA
EM Microelectronic - MARIN SA
IT8772EHighly integrated Super I/O using the Low Pin Count InterfaceITE
ITE

Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


www.DataSheet.fr    |   2019   |  Contactez-nous    |   Recherche