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Numéro de référence EDI88512CA
Description 512Kx8 Monolithic SRAM
Fabricant Microsemi 
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EDI88512CA Datasheet, Description
EDI88512CA
512Kx8 Monolithic SRAM, SMD 5962-95600
FEATURES
 Access Times of 15, 17, 20, 25, 35, 45, 55ns
 Data Retention Function (LPA version)
 TTL Compatible Inputs and Outputs
 Fully Static, No Clocks
 Organized as 512Kx8
 Commercial, Industrial and Military Temperature Ranges
 32 lead JEDEC Approved Evolutionary Pinout
• Ceramic Sidebrazed 600 mil DIP (Package 9)
• Ceramic Sidebrazed 400 mil DIP (Package 326)
• Ceramic 32 pin Flatpack (Package 344)
• Ceramic Thin Flatpack (Package 321)
• Ceramic SOJ (Package 140)
 36 lead JEDEC Approved Revolutionary Pinout
• Ceramic Flatpack (Package 316)
• Ceramic SOJ (Package 327)
• Ceramic LCC (Package 502)
 Single +5V (±10%) Supply Operation
The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM.
The 32 pin DIP pinout adheres to the JEDEC evolutionary standard
for the four megabit device. All 32 pin packages are pin for pin
upgrades for the single chip enable 128K x 8, the EDI88128CS.
Pins 1 and 30 become the higher order addresses.
The 36 pin revolutionary pinout also adheres to the JEDEC
standard for the four megabit device. The center pin power and
ground pins help to reduce noise in high performance systems.
The 36 pin pinout also allows the user an upgrade path to the
future 2Mx8.
A Low Power version with Data Retention (EDI88512LPA) is
also available for battery backed applications. Military product is
available compliant to Appendix A of MIL-PRF-38535.
*This product is subject to change without notice.
FIGURE 1 – PIN CONFIGURATION
36 PIN
TOP VIEW
A0 1
36 NC
A1 2
35 A18
A2 3
34 A17
A3 4
33 A16
A4 5
32 A15
CS# 6
31 OE#
I/O0 7
30 I/O7
I/O1 8
Vcc 9
Vss 10
36 pin
Revolutionary
29
28
27
I/O6
Vss
Vcc
I/O2 11
26 I/O5
I/O3 12
25 I/O4
WE# 13
24 A14
A5 14
23 A13
A6 15
22 A12
A7 16
21 A11
A8 17
20 A10
A9 18
19 NC
32 PIN
TOP VIEW
A18 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
Vss 16
32 pin
Evolutionary
32 Vcc
31 A15
30 A17
29 WE#
28 A13
27 A8
26 A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
I/O0-7
A0-18
WE#
CS#
OE#
VCC
VSS
NC
PIN DESCRIPTION
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power (+5V ±10%)
Ground
Not Connected
BLOCK DIAGRAM
Memory Array
A0-18
WE#
CS#
OE#
Address
Buffer
Address
Decoder
I/O
Circuits
I/O0-7
Microsemi Corporation reserves the right to change products or specications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 15
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
EDI88512CA Fiche technique
EDI88512CA
AC CHARACTERISTICS – READ CYCLE
(VCC = 5.0V, Vss = 0V, -55°C TA +125°C)
Symbol
Parameter
JEDEC Alt.
Read Cycle Time
tAVAV
tRC
Address Access Time
Chip Enable Access Time
tAVQV
tELQV
tAA
tACS
Chip Enable to Output in Low Z (1)
tELQX
tCLZ
Chip Disable to Output in High Z (1)
tEHQZ
tCHZ
Output Hold from Address Change
tAVQX
tOH
Output Enable to Output Valid
tGLQV
tOE
Output Enable to Output in Low Z (1)
tGLQX
tOLZ
Output Disable to Output in High Z(1) tGHQZ
1. This parameter is guaranteed by design but not tested.
tOHZ
15ns
Min Max
15
15
15
2
07
0
8
0
07
17ns
Min Max
17
17
17
3
07
0
8
0
07
20ns
Min Max
20
20
20
3
08
0
10
0
08
25ns
Min Max
25
25
25
3
0 10
0
12
0
0 10
35ns
Min Max
35
35
35
3
0 15
0
15
0
0 15
45ns
Min Max
45
45
45
3
0 20
0
25
0
0 20
55ns
Min Max
55
55
55
3
0 20
0
30
0
0 20
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC CHARACTERISTICS – WRITE CYCLE
(VCC = 5.0V, VSS = 0V, -55°CTA +125°C)
Symbol
Parameter
JEDEC Alt.
Write Cycle Time
tAVAV
tWC
Chip Enable to End of Write
tELWH
tELEH
tCW
tCW
Address Setup Time
tAVWL
tAVEL
tAS
tAS
Address Valid to End of Write
tAVWH
tAVEH
tAW
tAW
Write Pulse Width
tWLWH
tWLEH
tWP
tWP
Write Recovery Time
tWHAX
tEHAX
tWR
tWR
Data Hold Time
tWHDX
tEHDX
tDH
tDH
Write to Output in High Z (1)
tWLQZ
tWHZ
Data to Write Time
tDVWH
tDVEH
tDW
tDW
Output Active from End of Write (1)
tWHQX
tWLZ
1. This parameter is guaranteed by design but not tested.
15ns
Min Max
15
13
13
0
0
13
13
13
13
0
0
0
0
08
8
8
0
17ns
Min Max
17
14
14
0
0
14
14
14
14
0
0
0
0
08
8
8
0
20ns
Min Max
20
15
15
0
0
15
15
15
15
0
0
0
0
08
10
10
0
25ns
Min Max
25
17
17
0
0
17
17
17
17
0
0
0
0
0 10
12
12
0
35ns
Min Max
35
25
25
0
0
25
25
25
25
0
0
0
0
0 25
20
20
0
45ns
Min Max
45
30
30
0
0
30
30
30
30
0
0
0
0
0 30
25
25
0
55ns
Min Max
55
50
50
0
0
50
50
45
45
0
0
0
0
0 30
40
30
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Microsemi Corporation reserves the right to change products or specications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 15
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

3 Page

EDI88512CA pdf
EDI88512CA
PACKAGE 9: 32 LEAD SIDEBRAZED CERAMIC DIP, SMD 5962-95600XXMXA
1.616
1.584
ALL DIMENSIONS ARE IN INCHES
Pin 1 Indicator
0.200
0.125
0.061
0.017
0.020
0.016
15 x 0.100 = 1.500
0.060
0.040
0.155
0.100 0.115
TYP
0.620
0.600
0.600
NOM
PACKAGE 326: 32 LEAD SIDEBRAZED CERAMIC DIP
1.616
1.584
ALL DIMENSIONS ARE IN INCHES
Pin 1 Indicator
0.200
0.125
0.061
0.017
0.020
0.016
15 x 0.100 = 1.500
0.420
0.400
0.155
0.100 0.115
TYP
11
0.400
NOM
PACKAGE 140: 32 LEAD CERAMIC SOJ, SMD 5962-95600XXMUA
0.010
0.006
0.840
0.820
0.019
0.015
ALL DIMENSIONS ARE IN INCHES
0.444
0.430
0.155
0.106
Microsemi Corporation reserves the right to change products or specications without notice.
May 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 15
6
0.379
0.050
TYP
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

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